COMPLEMENTARY SILICON POWER TRANSISTORS

Silicon Power Transistors The MJ21195 and MJ21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. Features • Total Harmonic Distortion Characterized • High DC Current Gain − hFE = 25 Min @ IC = 8 Ad

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Silicon Power Transistors

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ONSEMI

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Silicon Power Transistors 16 AMPERES COMPLEMENTARY SILICON

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Silicon Power Transistors

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NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Bipolar Transistor, NPN, 250 V, 16 A

The MJ21195G and MJ21196G utilize Perforated Emitter technology and a specifically designed for high power audio output, disk head positioners and linear applications. • Total Harmonic Distortion Characterized\n• High DC Current Gain - hFE = 25 Min @ IC = 8 Adc\n• Excellent Gain Linearity\n• High SOA: 3 A, 80 V, 1 Second\n• Pb-Free Packages are Available;

ONSEMI

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Trans GP BJT NPN 250V 16A 3-Pin(2+Tab) TO-3 Tray

NJS

新泽西半导体

Silicon Power Transistors 16 AMPERES COMPLEMENTARY SILICON

文件：131.3 Kbytes 页数：6 Pages

ONSEMI

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Silicon Power Transistors

文件：83.23 Kbytes 页数：6 Pages

ONSEMI

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音频功放晶体管

THUNDER

中科创达

Package：TO-204AA，TO-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 250V 16A TO204

ONSEMI

安森美半导体