MI

型号：D5V0H1B2LPQ-7B；Package：X1-DFN1006-2；HIGH SURGE BIDIRECTIONAL TVS DIODE

Features SmallPackage(1.00mm,0.60mm,0.50mm)saveboardspace ProvidesESDProtectionperIEC61000-4-2Standard:Air±30kV,Contact±30kV Bi-directionalESDProtectionofoneline LowChampingVoltage HighsurgerobustnessIpp=25Afor8/20uspulse TotallyLead-Free&Fully

MI

型号：SN74LXC1T45QDRYRQ1；Package：SON；SN74LXC1T45-Q1 Automotive Single-Bit Dual-Supply Bus Transceiver With Configurable Level Shifting

1Features •Fullyconfigurabledual-raildesignallowseachport tooperatefrom1.1Vto5.5V •Robust,glitch-freepowersupplysequencing •Upto420-Mbpssupportfor3.3Vto5.0V •Schmitt-triggerinputsallowforslowornoisyinputs •I/O'swithintegrateddynamicpull-downresisto

MI

型号：SN74LXC1T45QDRYRQ1；Package：SON；SN74LXC1T45-Q1 Automotive Single-Bit Dual-Supply Bus Transceiver With Configurable Level Shifting

1Features •Fullyconfigurabledual-raildesignallowseachport tooperatefrom1.1Vto5.5V •Robust,glitch-freepowersupplysequencing •Upto420-Mbpssupportfor3.3Vto5.0V •Schmitt-triggerinputsallowforslowornoisyinputs •I/O'swithintegrateddynamicpull-downresisto

Mini-Reel

型号：GS-065-030-6-LR-MR；Package：8x8-mm-PDFN；700 V E-mode GaN transistor Datasheet

Features •700Venhancementmodepowertransistor •850Vtransientdrain-to-sourcevoltage •Bottom-cooled,8x8mmPDFNpackage •RDS(on)=37mΩ •IDS,max=40A/IDSmax,Pulse=67A •Simplegatedriverequirements(0Vto6V) •Transienttolerantgatedrive(-20V/+10V) •Highsw

MITH200PF1700LP

型号：MITH200PF1700LP；Package：Y3-M6；IGBT Module

Features/Advantages: •TrenchIGBT -lowVCE(sat) -easyparallelingduetothepositive temperaturecoefficientoftheon-state voltage -Tvjm=175°C -squareRBSOA@2xIc -shortcircuitratedfor10μsec. -lowgatecharge -lowEMI •Freewheelingdiode -fastandsoftreverse

MITH250PF1700LP

型号：MITH250PF1700LP；Package：Y3-M6；Phase leg

Features/Advantages: •TrenchIGBT -lowVCE(sat) -easyparallelingduetothepositive temperaturecoefficientoftheon-state voltage -Tvjm=175°C -squareRBSOA@2xIc -shortcircuitratedfor10μsec. -lowgatecharge -lowEMI •Freewheelingdiode -fastandsoftreverse

MIX2018A

型号：MIX2018A；Package：ESOP8；5W Single Channel Class F Audio Power Amplifier

Features UniqueFMinterference-freearchitecture ClassDoutputpower: -5.0W(VDD=5.0V,RL=2Ω,THD+N=10%) ClassFoutputpower: -4.9W(VDD=5.0V,RL=2Ω,THD+N=10%) Lowdistortionandlownoise Power-onPOPsoundsuppressionfunction Shutdowncurrentislessthan1uA

MIX3018

型号：MIX3018；Package：SOP16；3W Stereo Class F Audio Power Amplifier

describe MIX3018isahigh-efficiency,filter-free3WstereoClassFaudio amplifier.Ultra-lowEMIisverysuitableforportabledeviceswithFMfunction intheequipment. MIX3018’ssingle-endedinputarchitectureandextremelyhighPSRReffectivelyprovide ImprovedMIX3018'sabilitytosupp

MIX3022

型号：MIX3022；Package：ESOP8；3W X 2 Stereo Class D Audio Power Amplifier

describe MIX3022isastereoClassDaudiopoweramplifier.at5.25V Powersupply,THD+N=10%,canoutput3Won4ohmload ofpower. MIX3022'sexcellentnoiseandTHDspecificationscanprovidehigh-qualityaudio frequencysignalamplification.Veryfewexternalcomponentscanprovidestab

MIX3301

型号：MIX3301；Package：TSSOP28；2.1 Channel Class F Audio Amplifier

Features Leftandrightchanneloutputpower: -3W(PVDD=5.0V,RL=4Ω,THD+N=10%) Bassoutputpower: -10W(BVDD=7.0V,RL=2Ω,THD+N=10%) Leftandrightchannelpowerinputvoltage:3.0Vto5.0V Basschannelpowerinputvoltage:3.0Vto8.0V Basschannelpowerlimitfuncti