丝印：MI；Package：X1-DFN1006-2；HIGH SURGE BIDIRECTIONAL TVS DIODE

Features  Small Package (1.00mm, 0.60mm, 0.50mm) save board space  Provides ESD Protection per IEC 61000-4-2 Standard: Air ±30kV, Contact ±30kV  Bi-directional ESD Protection of one line  Low Champing Voltage  High surge robustness Ipp = 25A for 8/20 us pulse  Totally Lead-Free & Fully

文件：420.23 Kbytes 页数：5 Pages

DIODES

美台半导体

丝印：MI；Package：SON；SN74LXC1T45-Q1 Automotive Single-Bit Dual-Supply Bus Transceiver With Configurable Level Shifting

1 Features • Fully configurable dual-rail design allows each port to operate from 1.1 V to 5.5 V • Robust, glitch-free power supply sequencing • Up to 420-Mbps support for 3.3 V to 5.0 V • Schmitt-trigger inputs allow for slow or noisy inputs • I/O's with integrated dynamic pull-down resisto

文件：2.06333 Mbytes 页数：34 Pages

TI

德州仪器

丝印：MI；Package：SON；SN74LXC1T45-Q1 Automotive Single-Bit Dual-Supply Bus Transceiver With Configurable Level Shifting

1 Features • Fully configurable dual-rail design allows each port to operate from 1.1 V to 5.5 V • Robust, glitch-free power supply sequencing • Up to 420-Mbps support for 3.3 V to 5.0 V • Schmitt-trigger inputs allow for slow or noisy inputs • I/O's with integrated dynamic pull-down resisto

文件：2.17371 Mbytes 页数：36 Pages

TI

德州仪器

丝印：Mini-Reel；Package：8x8-mm-PDFN；700 V E-mode GaN transistor Datasheet

Features • 700 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled, 8x8 mm PDFN package • RDS(on) = 37 mΩ • IDS,max = 40 A / IDSmax,Pulse = 67 A • Simple gate drive requirements (0 V to 6 V) • Transient tolerant gate drive (-20 V / +10 V) • High sw

文件：893.34 Kbytes 页数：16 Pages

GAN

GaN Systems

丝印：MITH200PF1700LP；Package：Y3-M6；IGBT Module

Features / Advantages: • Trench IGBT - low VCE(sat) - easy paralleling due to the positive temperature coefficient of the on-state voltage - Tvjm = 175°C - square RBSOA @ 2x Ic - short circuit rated for 10 μsec. - low gate charge - low EMI • Free wheeling diode - fast and soft reverse

文件：210.32 Kbytes 页数：5 Pages

IXYS

艾赛斯

丝印：MITH250PF1700LP；Package：Y3-M6；Phase leg

Features / Advantages: • Trench IGBT - low VCE(sat) - easy paralleling due to the positive temperature coeffi cient of the on-state voltage - Tvjm = 175°C - square RBSOA @ 2x Ic - short circuit rated for 10 μsec. - low gate charge - low EMI • Free wheeling diode - fast and soft reverse

文件：263.22 Kbytes 页数：5 Pages

IXYS

艾赛斯

丝印：MIX2018A；Package：ESOP8；5W Single Channel Class F Audio Power Amplifier

Features  Unique FM interference-free architecture  Class D output power: -5.0W (VDD=5.0V, RL =2Ω, THD+N=10%)  Class F output power: -4.9W (VDD=5.0V, RL =2Ω, THD+N=10%)  Low distortion and low noise  Power-on POP sound suppression function  Shutdown current is less than 1uA

文件：383.22 Kbytes 页数：9 Pages

Mixinno

矽诺微

丝印：MIX3018；Package：SOP16；3W Stereo Class F Audio Power Amplifier

describe MIX3018 is a high-efficiency, filter-free 3W stereo Class F audio amplifier. Ultra-low EMI is very suitable for portable devices with FM function in the equipment. MIX3018’s single-ended input architecture and extremely high PSRR effectively provide Improved MIX3018's ability to supp

文件：613.62 Kbytes 页数：10 Pages

Mixinno

矽诺微

丝印：MIX3022；Package：ESOP8；3W X 2 Stereo Class D Audio Power Amplifier

describe MIX3022 is a stereo Class D audio power amplifier. at 5.25V Power supply, THD+N=10%, can output 3W on 4 ohm load of power. MIX3022's excellent noise and THD specifications can provide high-quality audio frequency signal amplification. Very few external components can provide stab

文件：233.49 Kbytes 页数：7 Pages

Mixinno

矽诺微

丝印：MIX3301；Package：TSSOP28；2.1 Channel Class F Audio Amplifier

Features  Left and right channel output power: -3W (PVDD=5.0V, RL =4 Ω, THD+N=10%)  Bass output power: -10W (BVDD=7.0V, RL =2 Ω, THD+N=10%)  Left and right channel power input voltage: 3.0V to 5.0V  Bass channel power input voltage: 3.0V to 8.0V  Bass channel power limit functi

文件：615.4 Kbytes 页数：7 Pages

Mixinno

矽诺微