Micro Power Switch

• Ou tput on & Inverted Output on without Magnet present in one chip\n\n• Low and high Hz presented in one chip\n• Strong RF noise protection\n• 2 7 to 5 5 V for battery powered applications\n• Omni polar , output switches with absolute value of North or South pole from magnet\n• Operation down to 2;

MST

美加

Micro Power Switch

Ultra low power, Inverted Omni-polar Hall Switch \n• Ou tput on & Inverted Output on without Magnet present in one chip\n\n• Low and high Hz presented in one chip\n• Strong RF noise protection\n• 2 7 to 5 5 V for battery powered applications\n• Omni polar , output switches with absolute value of Nor;

MST

美加

Silicon NPN Transistor Final RF Power Output

Description: The NTE235 is an NPN silicon transistor in a TO220 type case designed for use in high power output amplifier stages such as citizen band communications equipment.

文件：20.82 Kbytes 页数：2 Pages

NTE

Index-Guided High Power AlGaAs Laser Diode

Description The SLD235VL is a high-power, index-guided AlGaAs laser diode. Features • High power • Low current consumption • Small astigmatism • Small package (φ5.6mm) Applications Optical pickup for CD-R/RW

文件：45.81 Kbytes 页数：4 Pages

SONYSony Corporation

索尼

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

文件：55.13 Kbytes 页数：5 Pages

STMICROELECTRONICS

意法半导体