2.1 - 2.3GHz BAND 30W INTERNALLY MATCHD GaAs FET

DESCRIPTION The MGFS45V2123 is an internally impedance matched GaAs power FET especially designed for use in 2.1~2.3 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES ● Class A operation ● Internally matched to 50 (Ω) system ● High output

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三菱电机

2.1 - 2.3GHz BAND 32W INTERNALLY MATCHD GaAs FET

DESCRIPTION The MGFS45V2123A is an internally impedance-matched GaAs power FET especially designed for use in 2.1 - 2.3 GHz band amplifiers.The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES Class A operation Internally matched to 50(ohm) system Hi

文件：48.78 Kbytes 页数：1 Pages

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三菱电机

2.1 - 2.3GHz BAND 32W INTERNALLY MATCHED GaAs FET

DESCRIPTION The MGFS45V2123A is an internally impedance-matched GaAs power FET especially designed for use in 2.1 - 2.3 GHz band amplifiers.The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES Class A operation Internally matched to 50(ohm) system Hi

文件：237.09 Kbytes 页数：2 Pages

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三菱电机

2.1 - 2.3GHz BAND 32W INTERNALLY MATCHED GaAs FET

DESCRIPTION The MGFS45V2123A is an internally impedance-matched GaAs power FET especially designed for use in 2.1 - 2.3 GHz band amplifiers.The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES Class A operation Internally matched to 50(ohm) system Hi

文件：237.09 Kbytes 页数：2 Pages

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三菱电机

2.3 - 2.5GHz BAND 32W INTERNALLY MATCHED GaAs FET

DESCRIPTION The MGFS45V2325A is an internally impedance-matched GaAs power FET especially designed for use in 2.3 - 2.5 GHz band amplifiers.The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES Class A operation Internally matched to 50(ohm) system High

文件：237.7 Kbytes 页数：2 Pages

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三菱电机

2.3 - 2.5GHz BAND 32W INTERNALLY MATCHD GaAs FET

DESCRIPTION The MGFS45V2325A is an internally impedance-matched GaAs power FET especially designed for use in 2.3 - 2.5 GHz band amplifiers.The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES Class A operation Internally matched to 50(ohm) system High

文件：48.93 Kbytes 页数：1 Pages

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三菱电机

2.3 - 2.5GHz BAND 32W INTERNALLY MATCHED GaAs FET

DESCRIPTION The MGFS45V2325A is an internally impedance-matched GaAs power FET especially designed for use in 2.3 - 2.5 GHz band amplifiers.The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES Class A operation Internally matched to 50(ohm) system High

文件：237.7 Kbytes 页数：2 Pages

MITSUBISHI

三菱电机

2.5 - 2.7GHz BAND 30W INTERNALLY MATCHD GaAs FET

DESCRIPTION The MGFS45V2527 is an internally impedance matched GaAs power FET especially designed for use in 2.5~2.7 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES ● Class A operation ● Internally matched to 50 (Ω) system ● High output

文件：32.04 Kbytes 页数：2 Pages

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三菱电机

2.5 - 2.7GHz BAND 32W INTERNALLY MATCHED GaAs FET

DESCRIPTION The MGFS45V2527A is an internally impedance-matched GaAs power FET especially designed for use in 2.5 - 2.7 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES Class A operation Internally matched to 50(ohm) system • High output

文件：250.73 Kbytes 页数：3 Pages

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三菱电机

2.7 - 3.5GHz BAND 30W INTERNALLY MATCHD GaAs FET

DESCRIPTION The MGFS45V2735 is an internally impedance-matched GaAs power FET especially designed for use in 2.7 - 3.5 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES Class A operation Internally matched to 50(ohm) system High

文件：156.17 Kbytes 页数：2 Pages

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三菱电机