金属氧化层半导体场效应晶体管

MicrOne

微盟电子

StarMOST Power MOSFET

文件：201.77 Kbytes 页数：2 Pages

Good-Ark

固锝电子

GOLD BONDED DIODES

[VMI] 200 V - 1,000 V Single Phase Bridge 22.0 A - 25.0 A Forward Current 70 ns - 3000 ns Recovery Time

文件：2.79285 Mbytes 页数：78 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

1.2A, 650V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 1N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in the high speed switching applications of po

文件：297.85 Kbytes 页数：6 Pages

UTC

友顺

N-CHANNEL MOSFET

DESCRIPTION 1N60 1N65 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power su

文件：434.49 Kbytes 页数：6 Pages

ZSELEC

淄博圣诺