MOSFET

Force mos

力士科技

MOSFET

Force mos

力士科技

Surge Clamping, Transient Overvoltage Suppressor Unidirectional

Description: The NTE4900 series of silicon Transient Suppressors designed to protect voltage sensitive components from high energy voltage transients. Transient over voltage suppressor devices have become very important as a consequence of their high surge capability, extremely fast response time

文件：26.04 Kbytes 页数：2 Pages

NTE

Dual N-Channel, Logic Level, PowerTrench MOSFET

General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage an

文件：217.37 Kbytes 页数：5 Pages

FAIRCHILD

仙童半导体

Dual N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21     Definition • TrenchFET® Power MOSFETs • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC    

文件：215.32 Kbytes 页数：3 Pages

VISHAYVishay Siliconix

威世威世科技公司