首页 >MDR603C-T>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
PowerPC603eRISCMicroprocessor | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | Motorola | ||
SINGLEPHASE6.0AMPSURFACEMOUNTBRIDGERECTIFIERS | BYTESONICBytesonic Electronics Co., Ltd. 松浩电子松浩电子股份有限公司 | BYTESONIC | ||
SINGLE-PHASEGLASSPASSIVATEDSILICONBRIDGERECTIFIERVOLTAGERANGE50to1000VoltsCURRENT6.0Amperes FEATURES *Lowleakage *Lowforwardvoltage *MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof260'C | RECTRON Rectron Semiconductor | RECTRON | ||
ALLOY/STRUCTURAL—MACHINESCREWS | ETCList of Unclassifed Manufacturers 未分类制造商 | ETC | ||
NCE60VComplementaryMOSFET | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | NCEPOWER | ||
N-andP-Channel60-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
300mAHighPerformanceCMOSLDORegulatorwithEnableandEnhancedESDProtection | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
N-ChannelLogicLevelEnhancementModeFieldEffectTransistor GeneralDescription TheseN-ChannellogiclevelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thesedevicesareparticularlysuit | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-ChannelLogicLevelEnhancementModeFieldEffectTransistor GeneralDescription TheseN-ChannellogiclevelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thesedevicesareparticularlysuit | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=25A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=22mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC |
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