MDP13N50TH

N-ChannelMOSFET500V,13.0A,0.5(ohm)

GeneralDescription TheMDP13N50usesadvancedMagnachip’sMOSFETTechnology,whichprovideslowonstateresistance,highswitchingperformanceandexcellentquality.MDP13N50issuitabledeviceforSMPS,HIDandgeneralpurposeapplications. Features ■VDS=500V ■ID=13.0A@VGS=10V ■R

MS13N50

500VN-ChannelMOSFET

MSF13N50

500VN-ChannelMOSFET

MTH13N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=13A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.4Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

MTN13N50BFP

N-ChannelEnhancementModePowerMOSFET

MTN13N50CFP

N-ChannelEnhancementModePowerMOSFET

MTN13N50FP

N-ChannelEnhancementModePowerMOSFET

NDP13N50

N-ChannelMOSFET500V,13.0A,0.5(ohm)

GeneralDescription TheMDP13N50usesadvancedMagnachip’sMOSFETTechnology,whichprovideslowonstateresistance,highswitchingperformanceandexcellentquality.MDP13N50issuitabledeviceforSMPS,HIDandgeneralpurposeapplications. Features ■VDS=500V ■ID=13.0A@VGS=10V ■R

P13N50

N-Channel650V(D-S)MOSFET

PJF13N50

500VN-ChannelEnhancementModeMOSFET

FEATURES •13A,500V,RDS(ON)=0.52Ω@VGS=10V,ID=6.5A •LowONResistance •FastSwitching •LowGateCharge •FullyCharacterizedAvalancheVoltageandCurrent •SpeciallyDesigenedforACAdapter,BatteryChargeandSMPS •IncompliancewithEURoHs2002/95/ECDirectives