N-Channel MOSFET 500V, 13.0A, 0.5(ohm)

General Description The MDP13N50 uses advanced Magnachip’s MOSFET Technology, which provides low on state resistance, high switching performance and excellent quality. MDP13N50 is suitable device for SMPS, HID and general purpose applications. Features ■ VDS = 500V ■ ID = 13.0A @VGS = 10V ■ R

文件：851.29 Kbytes 页数：6 Pages

MGCHIP

N-Channel 650 V (D-S) MOSFET

文件：1.03293 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

500V N-Channel Enhancement Mode MOSFET

FEATURES • 13A , 500V, RDS(ON)=0.52Ω@VGS=10V, ID=6.5A • Low ON Resistance • Fast Switching • Low Gate Charge • Fully Characterized Avalanche Voltage and Current • Specially Desigened for AC Adapter, Battery Charge and SMPS • In compliance with EU RoHs 2002/95/EC Directives

文件：201.49 Kbytes 页数：5 Pages

PANJIT

強茂

500V N-Channel Enhancement Mode MOSFET

FEATURES • 13A , 500V, RDS(ON)=0.52Ω@VGS=10V, ID=6.5A • Low ON Resistance • Fast Switching • Low Gate Charge • Fully Characterized Avalanche Voltage and Current • Specially Desigened for AC Adapter, Battery Charge and SMPS • In compliance with EU RoHs 2002/95/EC Directives

文件：201.49 Kbytes 页数：5 Pages

PANJIT

強茂