MDFS13N50GTH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.65Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

MDP13N50

N-ChannelMOSFET500V,13.0A,0.5(ohm)

GeneralDescription TheMDP13N50usesadvancedMagnachip’sMOSFETTechnology,whichprovideslowonstateresistance,highswitchingperformanceandexcellentquality.MDP13N50issuitabledeviceforSMPS,HIDandgeneralpurposeapplications. Features ■VDS=500V ■ID=13.0A@VGS=10V ■R

MDP13N50B

N-ChannelMOSFET500V,13.0A,0.5(ohm)

MDP13N50BTH

N-ChannelMOSFET500V,13.0A,0.5(ohm)

MDP13N50BTH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=13A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.5Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

MDP13N50G

N-ChannelMOSFET500V,13.0A,0.5(ohm)

MDP13N50GTH

N-ChannelMOSFET500V,13.0A,0.5(ohm)

MDP13N50TH

N-ChannelMOSFET500V,13.0A,0.5(ohm)

GeneralDescription TheMDP13N50usesadvancedMagnachip’sMOSFETTechnology,whichprovideslowonstateresistance,highswitchingperformanceandexcellentquality.MDP13N50issuitabledeviceforSMPS,HIDandgeneralpurposeapplications. Features ■VDS=500V ■ID=13.0A@VGS=10V ■R

MDP13N50TH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=13A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.5Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

MS13N50

500VN-ChannelMOSFET