P-Channel Trench MOSFET, -40V, -43A, 17m(ohm)

文件：782.63 Kbytes 页数：6 Pages

MGCHIP

P-Channel Trench MOSFET

The MDD3752 uses advanced MagnaChip's Trench MOSFET Technology to provided high performance in on state resistance, switching performance and reliability. Low RDS(ON), Low Gate Charge can be offering superior benefit in the application.

MagnaChip

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isc P-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= -43A@ TC=25℃ ·Drain Source Voltage : VDSS= -40V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 17mΩ(Max) @VGS= -10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件：352.65 Kbytes 页数：2 Pages

ISC

无锡固电

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= -43A@ TC=25℃ ·Drain Source Voltage : VDSS= -40V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 17mΩ(Max) @VGS= -10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件：352.62 Kbytes 页数：2 Pages

ISC

无锡固电

P-Channel Trench MOSFET, -40V, -43A, 17m(ohm)

文件：897.91 Kbytes 页数：6 Pages

MGCHIP

P-Channel Trench MOSFET, -40V, -43A, 17m(ohm)

文件：897.91 Kbytes 页数：6 Pages

MGCHIP

P-Channel Trench MOSFET, -40V, -43A, 17m(ohm)

文件：782.63 Kbytes 页数：6 Pages

MGCHIP

P-Channel 4 0 V (D-S) MOSFET

文件：1.11414 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

40V P-Ch MOSFET

MagnaChip

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40V P-Ch MOSFET

MagnaChip

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