P-Channel Trench MOSFET, -40V, -43A, 17m(ohm)

文件：897.91 Kbytes 页数：6 Pages

MGCHIP

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= -43A@ TC=25℃ ·Drain Source Voltage : VDSS= -40V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 17mΩ(Max) @VGS= -10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件：352.65 Kbytes 页数：2 Pages

ISC

无锡固电

P-Channel Trench MOSFET, -40V, -43A, 17m(ohm)

文件：897.91 Kbytes 页数：6 Pages

MGCHIP

40V P-Ch MOSFET

MagnaChip

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