MJD210RLG

ComplementaryPlasticPowerTransistors

MJD210RLG

ComplementaryPlasticPowerTransistors

MJE210

PNP(COLLECTOR-EMITTERSUSTAININGVOLTAGELOWCOLLECTOR-EMITTER)

COLLECTOR-EMITTERSUSTAININGVOLTAGELOWCOLLECTOR-EMITTER SATURATIONVOLTAGE HIGHCURRENTGAIN-BANDWIDTH PRODUCT-MINfT=65MHz@Ic=-100mA ComplementarytoMJE200

MJE210

POWERTRANSISTORSCOMPLEMENTARYSILICON

ComplementarySiliconPowerPlasticTransistors Thesedevicesaredesignedforlowvoltage,low-power,high-gainaudioamplifierapplications. Features •Collector-EmitterSustainingVoltage-VCEO(sus)=25Vdc(Min)@IC=10mAdc •HighDCCurrentGain-hFE=70(Min)@IC=500mAdc

MJE210

5AMPEREPOWERTRANSISTORSCOMPLEMENTARYSILICON25VOLTS15WATTS

ComplementarySiliconPowerPlasticTransistors ...designedforlowvoltage,low–power,high–gainaudioamplifierapplications. •Collector–EmitterSustainingVoltage— VCEO(sus)=25Vdc(Min)@IC=10mAdc •HighDCCurrentGain—hFE=70(Min)@IC=500mAdc High

MJE210

SILICONPNPTRANSISTOR

DESCRIPTION TheMJE210isasiliconEpitaxial-BasePNPtransistorinJedecSOT-32plasticpackage,designedforlowvoltage,lowpower,highgainaudioamplifierapplications. ■STMicroelectronicsPREFERREDSALESTYPE ■PNPTRANSISTOR

MJE210

Feature

Feature •LowCollector-EmitterSaturationVoltage •HighCurrentGainBandwidthProduct:fT=65MHz@IC=-100mA(Min.) •ComplementtoMJE200

MJE210

SILICONPNPTRANSISTOR

■STMicroelectronicsPREFERRED SALESTYPE ■PNPTRANSISTOR DESCRIPTION TheMJE210isasiliconEpitaxial-BasePNP transistorinJedecSOT-32plasticpackage, designedforlowvoltage,lowpower,highgain audioamplifierapplications.

MJE210

ComplementarySiliconPowerPlasticTransistors

MJE210

COMPLEMENTARYSILICONPOWERTRANSISTORS

DESCRIPTION: TheCENTRALSEMICONDUCTORMJE200,MJE210typesarecomplementarysilicontransistorsdesignedforhighgainamplifierapplications.