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MMBT2369

NPNSwitchingTransistor

NPNSwitchingTransistor Thisdeviceisdesignedforhighspeedsaturationswitchingatcollectorcurrentsof10mAto100mA.SourcedfromProcess21.

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

MMBT2369

NPNGeneralPurposeAmplifier

FEATURES ●Epitaxialplanardieconstruction. ●Ultra-smallsurfacemountpackage. APPLICATIONS ●Useasamediumpoweramplifier.

BILINGalaxy Semi-Conductor Holdings Limited

银河微电常州银河世纪微电子股份有限公司

MMBT2369

SurfaceMountSi-Epi-PlanarSwitchingTransistors

SurfaceMountSi-Epi-PlanarSwitchingTransistors •Powerdissipation250mW •PlasticcaseSOT-23(TO-236) •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingta

DiotecDiotec Semiconductor

德欧泰克

MMBT2369

NPNSiliconSwitchingTransistor

NPNSiliconSwitchingTransistor

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半导体先之科半导体科技(东莞)有限公司

MMBT2369

Plastic-EncapsulateTransistors

FEATURES Epitaxialplanardieconstruction. Ultra-smallsurfacemountpackage.

HOTTECHGuangdong Hottech Co. Ltd.

合科泰深圳市合科泰电子有限公司

MMBT2369

Epitaxialplanardieconstruction.

FEATURES Epitaxialplanardieconstruction. Idealformediumpoweramplificationandswitching.

MAKOSEMIMAKO SEMICONDUCTOR CO.,LIMITED

美科半导体美科半导体股份(香港)有限公司

MMBT2369

NPNGeneralPurposeAmplifier

BILINGalaxy Semi-Conductor Holdings Limited

银河微电常州银河世纪微电子股份有限公司

MMBT2369

NPNGeneralPurposeAmplifier

FEATURES ●Epitaxialplanardieconstruction. ●Ultra-smallsurfacemountpackage. APPLICATIONS ●Useasamediumpoweramplifier.

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

MMBT2369(A)LT1

SwitchingTransistors

WILLASWILLAS ELECTRONIC CORP

威伦威伦电子股份有限公司

MMBT2369A

NPNSiliconSwitchingTransistor

NPNSiliconSwitchingTransistor

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半导体先之科半导体科技(东莞)有限公司

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