首页 >MD2369F>规格书列表
零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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NPNSwitchingTransistor NPNSwitchingTransistor Thisdeviceisdesignedforhighspeedsaturationswitchingatcollectorcurrentsof10mAto100mA.SourcedfromProcess21. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
NPNGeneralPurposeAmplifier FEATURES ●Epitaxialplanardieconstruction. ●Ultra-smallsurfacemountpackage. APPLICATIONS ●Useasamediumpoweramplifier. | BILINGalaxy Semi-Conductor Holdings Limited 银河微电常州银河世纪微电子股份有限公司 | BILIN | ||
SurfaceMountSi-Epi-PlanarSwitchingTransistors SurfaceMountSi-Epi-PlanarSwitchingTransistors •Powerdissipation250mW •PlasticcaseSOT-23(TO-236) •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingta | DiotecDiotec Semiconductor 德欧泰克 | Diotec | ||
NPNSiliconSwitchingTransistor NPNSiliconSwitchingTransistor | SEMTECH_ELECSEMTECH ELECTRONICS LTD. 先之科半导体先之科半导体科技(东莞)有限公司 | SEMTECH_ELEC | ||
Plastic-EncapsulateTransistors FEATURES Epitaxialplanardieconstruction. Ultra-smallsurfacemountpackage. | HOTTECHGuangdong Hottech Co. Ltd. 合科泰深圳市合科泰电子有限公司 | HOTTECH | ||
Epitaxialplanardieconstruction. FEATURES Epitaxialplanardieconstruction. Idealformediumpoweramplificationandswitching. | MAKOSEMIMAKO SEMICONDUCTOR CO.,LIMITED 美科半导体美科半导体股份(香港)有限公司 | MAKOSEMI | ||
NPNGeneralPurposeAmplifier | BILINGalaxy Semi-Conductor Holdings Limited 银河微电常州银河世纪微电子股份有限公司 | BILIN | ||
NPNGeneralPurposeAmplifier FEATURES ●Epitaxialplanardieconstruction. ●Ultra-smallsurfacemountpackage. APPLICATIONS ●Useasamediumpoweramplifier. | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司 | LUGUANG | ||
SwitchingTransistors | WILLASWILLAS ELECTRONIC CORP 威伦威伦电子股份有限公司 | WILLAS | ||
NPNSiliconSwitchingTransistor NPNSiliconSwitchingTransistor | SEMTECH_ELECSEMTECH ELECTRONICS LTD. 先之科半导体先之科半导体科技(东莞)有限公司 | SEMTECH_ELEC |
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