P-Channel Enhancement Mode Field Effect Transistor

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DESCRIPTION The NP50P04KDG is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 10 mΩ MAX. (VGS = −10 V, ID = −25 A) RDS(on)2 = 15 mΩ MAX. (VGS = −4.5 V, ID = −25 A) • Low input capacitance Ci

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