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MSD30P06

P-Channel60-V(D-S)MOSFET

BWTECH

Bruckewell Technology LTD

MTB30P06

TMOSPOWERFET30AMPERES60VOLTS

TMOSPOWERFET30AMPERES60VOLTSRDS(on)=0.080OHM TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and60voltTMOSdevices.JustaswithourTMOS

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

MTB30P06KFP

P-ChannelEnhancementModePowerMOSFET

CYSTEKECCystech Electonics Corp.

全宇昕科技全宇昕科技股份有限公司

MTB30P06V

PowerMOSFET30Amps,60VoltsP-ChannelD2PAK

ThisPowerMOSFETisdesignedtowithstandhighenergyinthe avalancheandcommutationmodes.Designedforlowvoltage,high speedswitchingapplicationsinpowersupplies,convertersandpower motorcontrols,thesedevicesareparticularlywellsuitedforbridge circuitswherediodespeedan

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MTB30P06V

TMOSPOWERFET30AMPERES60VOLTS

TMOSPOWERFET30AMPERES60VOLTSRDS(on)=0.080OHM TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and60voltTMOSdevices.JustaswithourTMOS

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

MTB30P06V

PowerMOSFET30Amps,60VoltsP?묬hannelD2PAK

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MTB30P06VG

PowerMOSFET30Amps,60VoltsP?묬hannelD2PAK

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MTB30P06VG

PowerMOSFET30Amps,60VoltsP-ChannelD2PAK

ThisPowerMOSFETisdesignedtowithstandhighenergyinthe avalancheandcommutationmodes.Designedforlowvoltage,high speedswitchingapplicationsinpowersupplies,convertersandpower motorcontrols,thesedevicesareparticularlywellsuitedforbridge circuitswherediodespeedan

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MTBV30P06V

PowerMOSFET30Amps,60VoltsP-ChannelD2PAK

ThisPowerMOSFETisdesignedtowithstandhighenergyinthe avalancheandcommutationmodes.Designedforlowvoltage,high speedswitchingapplicationsinpowersupplies,convertersandpower motorcontrols,thesedevicesareparticularlywellsuitedforbridge circuitswherediodespeedan

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MTP30P06

TMOSPOWERFET30AMPERES60VOLTSRDS(on)=0.080OHM

TMOSPOWERFET30AMPERES60VOLTSRDS(on)=0.080OHM P–ChannelEnhancement–ModeSiliconGateTMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and60volt

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

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