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MDL301

30VHot-CarrierDetectorSchottkyBarrierDiode

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

MDL301

SURFACEMOUNTSCHOTTKYBARRIERRECTIFIERDIODES

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

MDL301K

30VHot-CarrierDetectorSchottkyBarrierDiode

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

MIP301

SiliconMOSIC

■Features ●100VhighbreakdownvoltageMOSFETandCMOScontrolcircuitsareintegratedintoonechip ●5Vand3-5Woutputwith24VDCinput(Flybackmethod) ■Applications ●IPDforDC/DCconverter

PanasonicPanasonic Semiconductor

松下松下电器

MKT-U301A

PINGRIDARRAYCERAMIC301PINCAVITYDOWN

NSCNational Semiconductor (TI)

美国国家半导体美国国家半导体公司

MMBD301

SchottkyBarrierDiode

SchottkyBarrierDiode SourcedfromProcessGD

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

MMBD301

SURFACEMOUNTSCHOTTKYDIODE

VOLTAGE30VoltsPOWER200mWatts FEATURES •LowCapacitance:1.5pF(Max)atVR=15V •VeryLowVF:0.36V(Typ)atIF=1mA •ExtremelyFastSwitchingSpeed •LeadfreeincomplywithEURoHS2011/65/EUdirectives. •GreenmoldingcompoundasperIEC61249Std..(HalogenFree) MECHANICALDATA

PANJITPan Jit International Inc.

強茂強茂股份有限公司

MMBD301

SurfaceMountSchottkyBarrierDiode

Features *LowTurn-onVoltage *ForUHFandVHFdetectorapplication *AlsosuitableforsomeothersFastSwitching RFanddigitalapplication *ExtremelyLowMinorityCarrierLifetime-15ps(Typ) *LowReverseLeakage-IR=13nAdc(Typ) *VeryLowCapacitance-1.5pF(Max)@V=15VR

DAESAN

Daesan Electronics Corp.

MMBD301

SchottkyBarrierDiode

SchottkyBarrierDiode

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

MMBD301

30VoltsSchottkyBarrierDiodes

Features •HighEfficiencyUHFandVHFDetectorApplications. •LowCapacitanceandLowReverseLeakage •ExtremelyLowMinorityCarrierLifetime–15ps(Typ) •LeadFreeFinish/RohsCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabili

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

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