首页 >MCU18N20-TP>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
N-ChannelEnhancementModePowerMOSFET | CYSTEKECCystech Electonics Corp. 全宇昕科技全宇昕科技股份有限公司 | CYSTEKEC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=18A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.18Ω(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PowerMOStransistor GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinaplasticenvelopefeaturinghighavalancheenergycapability,stableblockingvoltage,fastswitchingandhighthermalcyclingperformancewithlowthermalresistance.IntendedforuseinSwitchedModePowerSupplies | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
200VN-ChannelEnhancementModeMOSFET Features RDS(ON),VGS@10V,ID@9A | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | PANJIT | ||
200VN-ChannelEnhancementModeMOSFET Features RDS(ON),VGS@10V,ID@9A | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | PANJIT | ||
200VN-ChannelEnhancementModeMOSFET Features RDS(ON),VGS@10V,ID@9A | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | PANJIT | ||
200VN-ChannelEnhancementModeMOSFET Features RDS(ON),VGS@10V,ID@9A | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | PANJIT | ||
N-Ch200VFastSwitchingMOSFETs | UPI uPI Semiconductor Corp | UPI | ||
StarMOSTPowerMOSFET | Good-Ark GOOD-ARK Electronics | Good-Ark | ||
N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.145Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100oC ■LOWGATECHARGE ■VERYHIGHCURRENTCAPABILITY ■APPLICATIONORIENTEDCHARACTERIZATION ■THROUGH-HOLEI2PAK(TO-262)POWE | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS |
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