首页 >MCU10P15>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
HighCapacitance,HighVoltage | CDE Cornell Dubilier Electronics | CDE | ||
PolyesterFilmCapacitors | CDE Cornell Dubilier Electronics | CDE | ||
P-CHANNELENHANCEMENT-MODEPOWERFIELD-EFFECTTRANSISTORS P-ChannelEnhancement-ModePowerField-EffectTransistors Features: ■SOAispower-dissipationlimited ■Nanosecondeswitchingspeeds ■Lineartransfercharacteristics ■Highinputimpedance ■Majoritycarrierdevice | GESS GE Solid State | GESS | ||
P-CHANNELENHANCEMENT-MODEPOWERFIELD-EFFECTTRANSISTORS P-ChannelEnhancement-ModePowerField-EffectTransistors Features: ■SOAispower-dissipationlimited ■Nanosecondeswitchingspeeds ■Lineartransfercharacteristics ■Highinputimpedance ■Majoritycarrierdevice | GESS GE Solid State | GESS | ||
-10A,-150V,0.500Ohm,P-ChannelPowerMOSFET ThisP-Channelenhancementmodesilicongatepowerfieldeffecttransistorisdesignedforapplicationssuchasswitchingregulators,switchingconvertors,motordrivers,relaydrivers,anddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrivepower.Thesety | Intersil Intersil Corporation | Intersil | ||
HighCurrentDensitySurfaceMountTMBS짰(TrenchMOSBarrierSchottky)Rectifier FEATURES •Verylowprofile-typicalheightof1.1mm •Idealforautomatedplacement •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable - | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
HighCurrentDensitySurfaceMountTMBS짰(TrenchMOSBarrierSchottky)Rectifier | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
Highpoweredmulti-lineVSIP짰tvsarray | PROTEC Protek Devices | PROTEC | ||
HIGHPOWEREDMULTI-LINEVSIP짰TVSARRAY | PROTEC Protek Devices | PROTEC | ||
HIGHPOWEREDMULTI-LINEVSIP짰TVSARRAY | PROTEC Protek Devices | PROTEC |
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