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RLD03N06CLE

0.3A,60V,6Ohm,ESDRated,CurrentLimited,VoltageClamped,LogicLevelN-ChannelPowerMOSFETs

Theseareintelligentmonolithicpowercircuitswhichincorporatealateralbipolartransistor,resistors,zenerdiodesandapowerMOStransistor.Thecurrentlimitingofthesedevicesallowittobeusedsafelyincircuitswhereashortedloadconditionmaybeencountered.Thedrainto source

Intersil

Intersil Corporation

RLD03N06CLE

0.3A,60V,ESDRated,CurrentLimited,VoltageClampedLogicLevelN-ChannelEnhancement-ModePowerMOSFETs

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

RLD03N06CLESM

0.3A,60V,6Ohm,ESDRated,CurrentLimited,VoltageClamped,LogicLevelN-ChannelPowerMOSFETs

Theseareintelligentmonolithicpowercircuitswhichincorporatealateralbipolartransistor,resistors,zenerdiodesandapowerMOStransistor.Thecurrentlimitingofthesedevicesallowittobeusedsafelyincircuitswhereashortedloadconditionmaybeencountered.Thedrainto source

Intersil

Intersil Corporation

RLD03N06CLESM

0.3A,60V,ESDRated,CurrentLimited,VoltageClampedLogicLevelN-ChannelEnhancement-ModePowerMOSFETs

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

RLP03N06CLE

0.3A,60V,ESDRated,CurrentLimited,VoltageClampedLogicLevelN-ChannelEnhancement-ModePowerMOSFETs

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

RLP03N06CLE

0.3A,60V,6Ohm,ESDRated,CurrentLimited,VoltageClamped,LogicLevelN-ChannelPowerMOSFETs

Theseareintelligentmonolithicpowercircuitswhichincorporatealateralbipolartransistor,resistors,zenerdiodesandapowerMOStransistor.Thecurrentlimitingofthesedevicesallowittobeusedsafelyincircuitswhereashortedloadconditionmaybeencountered.Thedrainto source

Intersil

Intersil Corporation

YJL03N06A

N-ChannelEnhancementModeFieldEffectTransistor

YANGJIEYangzhou yangjie electronic co., ltd

扬州扬杰电子扬州扬杰电子科技股份有限公司

YJL03N06B

N-ChannelEnhancementModeFieldEffectTransistor

YANGJIEYangzhou yangjie electronic co., ltd

扬州扬杰电子扬州扬杰电子科技股份有限公司

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