丝印：MCQ；Package：MSOP；3.0 V to 5.5 V, ±12 kV IEC ESD Protected, 500 kbps/50 Mbps RS-485 Transceivers

FEATURES ► TIA/EIA RS-485 compliant over full supply range ► 3.0 V to 5.5 V operating voltage range on VCC ► 1.62 V to 5.5 V VIO logic supply option available ► ESD protection on the bus pins ► IEC 61000-4-2 ≥ ±12 kV contact discharge ► IEC 61000-4-2 ≥ ±12 kV air discharge ► HBM ≥ ±30 kV ►

文件：1.92798 Mbytes 页数：25 Pages

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亚德诺

丝印：MCQ；Package：MSOP；3.0 V to 5.5 V, ±12 kV IEC ESD Protected, 500 kbps/50 Mbps RS-485 Transceivers

FEATURES ► TIA/EIA RS-485 compliant over full supply range ► 3.0 V to 5.5 V operating voltage range on VCC ► 1.62 V to 5.5 V VIO logic supply option available ► ESD protection on the bus pins ► IEC 61000-4-2 ≥ ±12 kV contact discharge ► IEC 61000-4-2 ≥ ±12 kV air discharge ► HBM ≥ ±30 kV ►

文件：1.92798 Mbytes 页数：25 Pages

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亚德诺

丝印：MCQ；Package：DO-214AC；400W Transient Voltage Suppressor (TVS) protection device

Description and applications This device has the ability to clamp dangerous high voltage, short term transients such as produced by directed or radiated electrostatic discharge phenomena before entering sensitive component regions of a circuit design. Response time of clamping action is virtual

文件：489.87 Kbytes 页数：6 Pages

Microsemi

美高森美

丝印：MCQ；Package：SOT25；AUTOMOTIVE, 26V, 400kHz BANDWIDTH UNI-DIRECTIONAL, LOW-SIDE AND HIGH-SIDE CURRENT MONITOR

Features •Supply Voltage Range: 2.7V to 5.5V •Wide Common-Mode Range: -0.3V to 26V •Gain Error: (Maximum over Temperature): ±1% •Choice of Gains: ▪Pinout A1 and B1: 20V/V ▪Pinout A2 and B2: 50V/V ▪Pinout A3 and B3: 100V/V ▪Pinout A4 and B4: 200V/V •Low Offset Voltage: Typical ±100μV a

文件：646.08 Kbytes 页数：10 Pages

DIODES

美台半导体

ini European PCB Terminal Blocks

Features: • Series is supplied with the clamp in the open position • Double captive screws • Elevator clamp system • Testing points/holes • 2 to 18 positions single mold • Housing is resistant to chlorinated solvents, with no dioxin or detrimental to health halogens • Every position of thi

文件：154.39 Kbytes 页数：1 Pages

BLOCKMASTER-ELECTRONICS

Dual N-Channel Power MOSFET

文件：573.4 Kbytes 页数：4 Pages

MCC

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Dual N-Channel Power MOSFET

文件：513.13 Kbytes 页数：4 Pages

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N -Channel Enhancement Mode Field Effect Transistor

文件：993.26 Kbytes 页数：5 Pages

MCC

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P -Channel Enhancement Mode Field Effect Transistor

文件：628.74 Kbytes 页数：4 Pages

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N-Channel Power MOSFET

文件：652.51 Kbytes 页数：4 Pages

MCC

美微科