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MCP6V99

10 MHz, Zero-Drift Op Amps

Features • High DC Precision: - VOS Drift: ±150 nV/°C (maximum) - VOS: ±25 μV (maximum) - AOL: 111 dB (minimum, VDD = 5.5V) - PSRR: 110 dB (minimum, VDD = 5.5V) - CMRR: 112 dB (minimum, VDD = 5.5V) - Eni: 0.24 μVP-P (typical), f = 0.1 Hz to 10 Hz - Eni: 0.08 μVP-P (typical), f = 0.01 Hz to

文件:2.41262 Mbytes 页数:52 Pages

Microchip

微芯科技

MCP6V99

10 MHz, 1.1 mA, Zero-Drift Op Amps

The MCP6V96/6U/7/9 family of operational amplifiers provides input offset voltage correction for very low offset and offset drift. These devices provide a gain bandwidth product of 10MHz, are unity gain stable, have no 1/f noise, and provide superior CMRR and PSRR performance. These products operate • Zero-Drift architecture\n• Maximum offset drift of 150 nV/C\n• GBWP of 10 MHz\n• Small TSSOP packaging;

Microchip

微芯科技

MCP6V99-E/ST

10 MHz, Zero-Drift Op Amps

Features • High DC Precision: - VOS Drift: ±150 nV/°C (maximum) - VOS: ±25 μV (maximum) - AOL: 111 dB (minimum, VDD = 5.5V) - PSRR: 110 dB (minimum, VDD = 5.5V) - CMRR: 112 dB (minimum, VDD = 5.5V) - Eni: 0.24 μVP-P (typical), f = 0.1 Hz to 10 Hz - Eni: 0.08 μVP-P (typical), f = 0.01 Hz to

文件:2.41262 Mbytes 页数:52 Pages

Microchip

微芯科技

MCP6V99T-E/LTY

10 MHz, Zero-Drift Op Amps

Features • High DC Precision: - VOS Drift: ±150 nV/°C (maximum) - VOS: ±25 μV (maximum) - AOL: 111 dB (minimum, VDD = 5.5V) - PSRR: 110 dB (minimum, VDD = 5.5V) - CMRR: 112 dB (minimum, VDD = 5.5V) - Eni: 0.24 μVP-P (typical), f = 0.1 Hz to 10 Hz - Eni: 0.08 μVP-P (typical), f = 0.01 Hz to

文件:2.41262 Mbytes 页数:52 Pages

Microchip

微芯科技

MCP6V99T-E/MNY

10 MHz, Zero-Drift Op Amps

Features • High DC Precision: - VOS Drift: ±150 nV/°C (maximum) - VOS: ±25 μV (maximum) - AOL: 111 dB (minimum, VDD = 5.5V) - PSRR: 110 dB (minimum, VDD = 5.5V) - CMRR: 112 dB (minimum, VDD = 5.5V) - Eni: 0.24 μVP-P (typical), f = 0.1 Hz to 10 Hz - Eni: 0.08 μVP-P (typical), f = 0.01 Hz to

文件:2.41262 Mbytes 页数:52 Pages

Microchip

微芯科技

MCP6V99T-E/MS

10 MHz, Zero-Drift Op Amps

Features • High DC Precision: - VOS Drift: ±150 nV/°C (maximum) - VOS: ±25 μV (maximum) - AOL: 111 dB (minimum, VDD = 5.5V) - PSRR: 110 dB (minimum, VDD = 5.5V) - CMRR: 112 dB (minimum, VDD = 5.5V) - Eni: 0.24 μVP-P (typical), f = 0.1 Hz to 10 Hz - Eni: 0.08 μVP-P (typical), f = 0.01 Hz to

文件:2.41262 Mbytes 页数:52 Pages

Microchip

微芯科技

MCP6V99T-E/OT

10 MHz, Zero-Drift Op Amps

Features • High DC Precision: - VOS Drift: ±150 nV/°C (maximum) - VOS: ±25 μV (maximum) - AOL: 111 dB (minimum, VDD = 5.5V) - PSRR: 110 dB (minimum, VDD = 5.5V) - CMRR: 112 dB (minimum, VDD = 5.5V) - Eni: 0.24 μVP-P (typical), f = 0.1 Hz to 10 Hz - Eni: 0.08 μVP-P (typical), f = 0.01 Hz to

文件:2.41262 Mbytes 页数:52 Pages

Microchip

微芯科技

MCP6V99T-E/ST

10 MHz, Zero-Drift Op Amps

Features • High DC Precision: - VOS Drift: ±150 nV/°C (maximum) - VOS: ±25 μV (maximum) - AOL: 111 dB (minimum, VDD = 5.5V) - PSRR: 110 dB (minimum, VDD = 5.5V) - CMRR: 112 dB (minimum, VDD = 5.5V) - Eni: 0.24 μVP-P (typical), f = 0.1 Hz to 10 Hz - Eni: 0.08 μVP-P (typical), f = 0.01 Hz to

文件:2.41262 Mbytes 页数:52 Pages

Microchip

微芯科技

MCP6V99T-E/Y

10 MHz, Zero-Drift Op Amps

Features • High DC Precision: - VOS Drift: ±150 nV/°C (maximum) - VOS: ±25 μV (maximum) - AOL: 111 dB (minimum, VDD = 5.5V) - PSRR: 110 dB (minimum, VDD = 5.5V) - CMRR: 112 dB (minimum, VDD = 5.5V) - Eni: 0.24 μVP-P (typical), f = 0.1 Hz to 10 Hz - Eni: 0.08 μVP-P (typical), f = 0.01 Hz to

文件:2.41262 Mbytes 页数:52 Pages

Microchip

微芯科技

MCP6V99T-ESLASHLTY

10 MHz, Zero-Drift Op Amps

Features • High DC Precision: - VOS Drift: ±150 nV/°C (maximum) - VOS: ±25 μV (maximum) - AOL: 111 dB (minimum, VDD = 5.5V) - PSRR: 110 dB (minimum, VDD = 5.5V) - CMRR: 112 dB (minimum, VDD = 5.5V) - Eni: 0.24 μVP-P (typical), f = 0.1 Hz to 10 Hz - Eni: 0.08 μVP-P (typical), f = 0.01 Hz to

文件:2.41262 Mbytes 页数:52 Pages

Microchip

微芯科技

技术参数

  • GBWP (kHz):

    10000

  • Slew Rate (V/µs):

    9.5

  • Vos Max (µV):

    25

  • Vos Drift Typical (µV/°C):

    0.15

  • Supply Voltage Min (V):

    2.4

  • Supply Voltage Max (V):

    5.5

  • Iq Typical (µA):

    1100

  • Iq Max (µA):

    1600

  • Input Voltage Noise Density (nV/rt(Hz)):

    11

  • Ib Typical (pA):

    2

  • PSRR Min (dB):

    110

  • CMRR Min (dB):

    112

  • Aol (dB):

    111

  • PM (deg):

    60

  • Isc (mA):

    40

  • Rail-to-Rail:

    In/Out

  • Unity Gain Stable:

    Yes

  • Enhanced EMI Rejection:

    Yes

  • Operating Temperature Range (°C):

    -40 to +125

  • Packages:

    14\\TSSOP

  • Pricing:

    2.7500

  • Status:

    In Production

供应商型号品牌批号封装库存备注价格
Microc
25+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
询价
Microchip
21+
N/A
2500
21+
询价
MICROCHIP(美国微芯)
24+
TSSOP14
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
询价
Microchip
10560
只做正品
询价
MICROCHIP(美国微芯)
23+
TSSOP-14
7087
原装现货,免费送样,可开原型号税票。提供技术支持
询价
MICROCHIP
24+
con
288747
优势库存,原装正品
询价
Microchip/微芯
25+
原厂封装
10280
原厂授权代理,专注军工、汽车、医疗、工业、新能源!
询价
MICROCHIP
25+
SMT
15000
原装正品长期现货
询价
MICROCHIP
17+
6200
100%原装正品现货
询价
Microchip
23+
2017-MI
21500
受权代理!全新原装现货特价热卖!
询价
更多MCP6V99供应商 更新时间2025-10-11 16:30:00