首页 >MCP3008ISL>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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NCEN-ChannelEnhancementModePowerMOSFET Description TheNCE3008Yusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Thisdeviceissuitablefor useasaBatteryprotectionorinotherswitchingapplication. GeneralFeature ●VDS=30V,ID=8A RDS(ON) | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | NCEPOWER | ||
30/30V,350/200mAN/P-channelTrenchMOSFET | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
30/30V400/220mAN/P-channelTrenchMOSFET | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
30/30V,400/220mAN/P-channelTrenchMOSFET 1.Generaldescription ComplementaryN/P-channelenhancementmodeField-EffectTransistor(FET)inanultrasmall andflatleadSOT666Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFET technology. 2.Featuresandbenefits •Lowthresholdvoltage •Veryfastswitching •Trench | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
30V,400mAN-channelTrenchMOSFET | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
30V,singleN-channelTrenchMOSFET | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
30V,singleN-channelTrenchMOSFET 1.Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inaleadlessultrasmallDFN1006B-3 (SOT883B)Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits •Veryfastswitching •Lowthresholdvoltage •TrenchMOSFETt | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
N-ChannelEnhancementModeMOSFET Application +Load/PowerSwitching +InterfacingSwitching +BatteryManagementforUltraSmallPortable Electronics +LogicLevelShift | TECHPUBLICTECH PUBLIC Electronics co LTD 台舟电子台舟电子股份有限公司 | TECHPUBLIC | ||
30V,350mAdualN-channelTrenchMOSFET 1.Generaldescription DualN-channelenhancementmodeField-EffectTransistor(FET)inaverysmallSOT363(SC-88) Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits •Veryfastswitching •Lowthresholdvoltage •TrenchMOSFETtechnology | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
30V,350mAN-channelTrenchMOSFET 1.1Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inasmallSOT416(SC-75) Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 1.2Featuresandbenefits Veryfastswitching Lowthresholdvoltage TrenchMOSFETtechnology ESDpr | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA |
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