丝印：LB；Package：SOT363；30 V, 350 mA dual N-channel Trench MOSFET

1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Very fast switching • Low threshold voltage • Trench MOSFET technology

文件：277.06 Kbytes 页数：15 Pages

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安世安世半导体(中国)有限公司

30 V, 350 mA dual N-channel Trench MOSFET

文件：902.63 Kbytes 页数：17 Pages

恩XP

30 V, 350 mA dual N-channel Trench MOSFET

文件：902.63 Kbytes 页数：17 Pages

PHI

飞利浦

30 V, 350 mA dual N-channel Trench MOSFET

Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. • Very fast switching\n• Low threshold voltage\n• Trench MOSFET technology\n• ESD protection up to 2 kV\n• AEC-Q101 qualified;

Nexperia

安世

30 V, 350 mA dual N-channel Trench MOSFET

恩XP

恩智浦