Multilayer High Power, High Temperature Mica and PTFE Capacitors

文件：562.23 Kbytes 页数：7 Pages

CDE

丝印：MCM；Package：DO-214AC；400W Transient Voltage Suppressor (TVS) protection device

Description and applications This device has the ability to clamp dangerous high voltage, short term transients such as produced by directed or radiated electrostatic discharge phenomena before entering sensitive component regions of a circuit design. Response time of clamping action is virtual

文件：489.87 Kbytes 页数：6 Pages

MICROSEMI

美高森美

1M x 4 Bit Fast Static Random Access Memory with ECL I/O

The MCM101524 is a 4,194,304 bit static random access memory organized as 1,048,576 words of 4 bits. This circuit is fabricated using high performance silicon–gate BiCMOS technology. Asynchronous design eliminates the need for external clocks or timing strobes. The MCM101524 is available in a 400

文件：454.7 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

1M x 4 Bit Fast Static Random Access Memory with ECL I/O

The MCM101524 is a 4,194,304 bit static random access memory organized as 1,048,576 words of 4 bits. This circuit is fabricated using high performance silicon–gate BiCMOS technology. Asynchronous design eliminates the need for external clocks or timing strobes. The MCM101524 is available in a 400

文件：454.7 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

1M x 4 Bit Fast Static Random Access Memory with ECL I/O

The MCM101524 is a 4,194,304 bit static random access memory organized as 1,048,576 words of 4 bits. This circuit is fabricated using high performance silicon–gate BiCMOS technology. Asynchronous design eliminates the need for external clocks or timing strobes. The MCM101524 is available in a 400

文件：454.7 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

2M x 2 Bit Fast Static Random Access Memory with ECL I/O

The MCM101525 is a 4,194,304 bit static random access memory organized as 2,097,152 words of 2 bits. This device features complementary outputs. This circuit is fabricated using high performance silicon–gate BiCMOS technology. Asynchronous design eliminates the need for external clocks or timing

文件：454.88 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

2M x 2 Bit Fast Static Random Access Memory with ECL I/O

The MCM101525 is a 4,194,304 bit static random access memory organized as 2,097,152 words of 2 bits. This device features complementary outputs. This circuit is fabricated using high performance silicon–gate BiCMOS technology. Asynchronous design eliminates the need for external clocks or timing

文件：454.88 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

2M x 2 Bit Fast Static Random Access Memory with ECL I/O

The MCM101525 is a 4,194,304 bit static random access memory organized as 2,097,152 words of 2 bits. This device features complementary outputs. This circuit is fabricated using high performance silicon–gate BiCMOS technology. Asynchronous design eliminates the need for external clocks or timing

文件：454.88 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

CMOS LSI

256-BIT STATIC RANDOM ACCESS MEMORY

文件：384.79 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

CMOS LSI

256-BIT STATIC RANDOM ACCESS MEMORY

文件：384.79 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉