首页 >MCH6307-N-TL-EIC>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
P-Channel20V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
650V25AInsulatedGateBipolarTransistor | ROHMRohm 罗姆罗姆半导体集团 | ROHM | ||
P-Channel30-V(D-S)MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Available •TrenchFET®PowerMOSFET APPLICATIONS •LoadSwitch | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
D2BTRANSCEIVERLSI | OKIOki Electric Cable Co.,Ltd 冲电线冲电线株式会社 | OKI | ||
D2BTRANSCEIVERLSI | OKIOki Electric Cable Co.,Ltd 冲电线冲电线株式会社 | OKI | ||
D2BTRANSCEIVERLSI | OKIOki Electric Cable Co.,Ltd 冲电线冲电线株式会社 | OKI | ||
NATIONALAEROSPACESTANDARD | ETCList of Unclassifed Manufacturers 未分类制造商 | ETC | ||
1310nmInGaAsPMQWDFBLASERDIODEINCANPACKAGEFOR2.5Gb/sAPPLICATIONS | CEL California Eastern Labs | CEL | ||
LASERDIODE 1310nmFOR2.5Gb/s InGaAsPMQW-DFBLASERDIODE DESCRIPTION TheNX6307Seriesisa1310nmMultipleQuantumWell(MQW)structured DistributedFeed-Back(DFB)laserdiodewithInGaAsmonitorPIN-PD.This deviceisidealforSynchronousDigitalHierarchy(SDH)system,shorthaul andlong | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
LASERDIODE 1310nmFOR2.5Gb/s InGaAsPMQW-DFBLASERDIODE DESCRIPTION TheNX6307Seriesisa1310nmMultipleQuantumWell(MQW)structured DistributedFeed-Back(DFB)laserdiodewithInGaAsmonitorPIN-PD.This deviceisidealforSynchronousDigitalHierarchy(SDH)system,shorthaul andlong | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS |
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