MCH5803

DC / DC Converter Applications

MOSFET:N-ChannelSiliconMOSFET SBD:SchottkyBarrierDiode Features •CompositetypewithanN-ChannelSilliconMOSFET(MCH3408)andaSchottkyBarrierDiode(SBS006M)containedinonepackagefacilitatinghigh-densitymounting. [MOSFET] •LowON-resistance. •Ultrahigh-speedswi

NTD5803N

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=76A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=7mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

NTD5803N

PowerMOSFET40V,76A,SingleN?묬hannel,DPAK

NTD5803NG

PowerMOSFET40V,76A,SingleN?묬hannel,DPAK

NTE5803

NTE5800thruNTE5809AxialLeadStandardRecoverySiliconRectifiers,3Amp,DO27

Description: TheNTE5800throughNTE5809siliconrectifiersaredesignedforuseinpowersuppliesandotherapplicationshavingneedofadevicewiththefollowingfeatures: ●HighCurrenttoSmallSize ●HighSurgeCurrentCapability ●LowForwardVoltageDrop

NVD5803N

PowerMOSFET40V,85A,SingleN?묬hannel,DPAK

NVD5803N

PowerMOSFET

NVD5803N

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=85A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=5.7mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

P5803NAG

N-andP-ChannelV(D-S)MOSFET

P5803NAG

N&P-ChannelEnhancementModeMOSFET