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MCH3481

Single N-Channel Power MOSFET

This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features • Low On-Resistance • 1.2V dr

文件:565.63 Kbytes 页数:5 Pages

ONSEMI

安森美半导体

MCH3481

Low Votage Drive Switching Device Applications

Low Votage Drive Switching Device Applications Features • ON-resistance RDS(on)1=80mΩ (typ.) • 1.2V drive • Halogen free compliance • Protection diode in

文件:491.99 Kbytes 页数:7 Pages

SANYO

三洋

MCH3481

单 N 沟道,功率 MOSFET,20V,2A,104mΩ

This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. • Low On-Resistance\n• Improves Efficiency by Reducing Conduction Losses, Reduces Heat Dissipation\n• 1.2V drive\n• Drive at Low Voltage\n• Pb-Free, Halogen Free and RoSH compliance\n• Environmental Consideration\n• ESD Diode-Protected Gate\n• ESD Resistance\n• Ultra small Package MCPH3 (2.0mm×2.1mm;

ONSEMI

安森美半导体

MCH3481-TL-H

Low Votage Drive Switching Device Applications

Low Votage Drive Switching Device Applications Features • ON-resistance RDS(on)1=80mΩ (typ.) • 1.2V drive • Halogen free compliance • Protection diode in

文件:491.99 Kbytes 页数:7 Pages

SANYO

三洋

MCH3481-TL-H

Single N-Channel Power MOSFET

This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features • Low On-Resistance • 1.2V dr

文件:565.63 Kbytes 页数:5 Pages

ONSEMI

安森美半导体

MCH3481-TL-W

Single N-Channel Power MOSFET

This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features • Low On-Resistance • 1.2V dr

文件:565.63 Kbytes 页数:5 Pages

ONSEMI

安森美半导体

技术参数

  • Pb-free:

    Pb

  • Halide free:

    H

  • Status:

    Active

  • Channel Polarity:

    N-Channel

  • Configuration:

    Single

  • V(BR)DSS Min (V):

    20

  • VGS Max (V):

    9

  • VGS(th) Max (V):

    0.9

  • ID Max (A):

    2

  • PD Max (W):

    0.8

  • RDS(on) Max @ VGS = 2.5 V(mΩ):

    147

  • RDS(on) Max @ VGS = 4.5 V(mΩ):

    104

  • Qg Typ @ VGS = 10 V (nC):

    2.9

  • Ciss Typ (pF):

    175

  • Package Type:

    SC-70FL/MCPH-3

供应商型号品牌批号封装库存备注价格
ON/安森美
20+
SOT-323
120000
原装正品 可含税交易
询价
25+
5000
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
ON
20+
SC-70FL
36800
原装优势主营型号-可开原型号增税票
询价
ON/安森美
23+
SC-70FLMCPH-3
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
ON
2022+
SC-70FL / MCPH-3
38550
全新原装 支持表配单 中国著名电子元器件独立分销
询价
ONSEMI/安森美
2511
SOT-323
360000
电子元器件采购降本30%!原厂直采,砍掉中间差价
询价
ON
17+
NA
6200
100%原装正品现货
询价
ON
24+
SMD
12000
原厂/代理渠道价格优势
询价
三年内
1983
只做原装正品
询价
SANYO
19+
MCPH-3
200000
询价
更多MCH3481供应商 更新时间2025-12-14 14:00:00