| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
MCH3481 | Single N-Channel Power MOSFET This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features • Low On-Resistance • 1.2V dr 文件:565.63 Kbytes 页数:5 Pages | ONSEMI 安森美半导体 | ONSEMI | |
MCH3481 | Low Votage Drive Switching Device Applications Low Votage Drive Switching Device Applications Features • ON-resistance RDS(on)1=80mΩ (typ.) • 1.2V drive • Halogen free compliance • Protection diode in 文件:491.99 Kbytes 页数:7 Pages | SANYO 三洋 | SANYO | |
MCH3481 | 单 N 沟道,功率 MOSFET,20V,2A,104mΩ This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. • Low On-Resistance\n• Improves Efficiency by Reducing Conduction Losses, Reduces Heat Dissipation\n• 1.2V drive\n• Drive at Low Voltage\n• Pb-Free, Halogen Free and RoSH compliance\n• Environmental Consideration\n• ESD Diode-Protected Gate\n• ESD Resistance\n• Ultra small Package MCPH3 (2.0mm×2.1mm; | ONSEMI 安森美半导体 | ONSEMI | |
Low Votage Drive Switching Device Applications Low Votage Drive Switching Device Applications Features • ON-resistance RDS(on)1=80mΩ (typ.) • 1.2V drive • Halogen free compliance • Protection diode in 文件:491.99 Kbytes 页数:7 Pages | SANYO 三洋 | SANYO | ||
Single N-Channel Power MOSFET This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features • Low On-Resistance • 1.2V dr 文件:565.63 Kbytes 页数:5 Pages | ONSEMI 安森美半导体 | ONSEMI | ||
Single N-Channel Power MOSFET This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features • Low On-Resistance • 1.2V dr 文件:565.63 Kbytes 页数:5 Pages | ONSEMI 安森美半导体 | ONSEMI |
技术参数
- Pb-free:
Pb
- Halide free:
H
- Status:
Active
- Channel Polarity:
N-Channel
- Configuration:
Single
- V(BR)DSS Min (V):
20
- VGS Max (V):
9
- VGS(th) Max (V):
0.9
- ID Max (A):
2
- PD Max (W):
0.8
- RDS(on) Max @ VGS = 2.5 V(mΩ):
147
- RDS(on) Max @ VGS = 4.5 V(mΩ):
104
- Qg Typ @ VGS = 10 V (nC):
2.9
- Ciss Typ (pF):
175
- Package Type:
SC-70FL/MCPH-3
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
20+ |
SOT-323 |
120000 |
原装正品 可含税交易 |
询价 | ||
25+ |
5000 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||||
ON |
20+ |
SC-70FL |
36800 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
ON/安森美 |
23+ |
SC-70FLMCPH-3 |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
ON |
2022+ |
SC-70FL / MCPH-3 |
38550 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
ONSEMI/安森美 |
2511 |
SOT-323 |
360000 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
询价 | ||
ON |
17+ |
NA |
6200 |
100%原装正品现货 |
询价 | ||
ON |
24+ |
SMD |
12000 |
原厂/代理渠道价格优势 |
询价 | ||
三年内 |
1983 |
只做原装正品 |
询价 | ||||
SANYO |
19+ |
MCPH-3 |
200000 |
询价 |
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