首页 >MCH3333TLE>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
Step-upDC-DCConverterIC | MITSUMIMitsumi Electronics, Corp. 三美三美电机株式会社 | MITSUMI | ||
All-in-OneGNSS | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | ETC1 | ||
All-in-OneGNSS | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | ETC1 | ||
50WATTZENERTRANSIENTSUPRESSORS3.9TO2OOVOLTS 50WATTZENERTRANSIENTSUPRESSORS3.9TO2OOVOLTS | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | Motorola | ||
ThisdeviceisespeciallydesignedforfullcolorRGapplications. Features -Package:whitePLCC-6package,diffusedsiliconeresin,blacksurface -Chiptechnology:Thinfilm/UX:3 -Typ.Radiation:120°(Lambertianemitter) -Color:λdom=621nm(●red);λdom=532nm(●truegreen) -ESD:500Vacc.toANSI/ESDA/JEDECJS-001(HBM,Class1B) | OSRAMOSRAM GmbH 艾迈斯欧司朗欧司朗光电半导体 | OSRAM | ||
ThisdeviceisespeciallydesignedforfullcolorRGBapplications. Features -Package:whitePLCC-6package,diffusedsiliconeresin,blacksurface -Chiptechnology:Thinfilm/UX:3/InGaNonSapphire -Typ.Radiation:120°(Lambertianemitter) -Color:λdom=621nm(●red);λdom=532nm(●truegreen);λdom=467nm(●blue) -ESD:500Vacc.toANSI/ES | OSRAMOSRAM GmbH 艾迈斯欧司朗欧司朗光电半导体 | OSRAM | ||
N-ChannelEnhancementModePowerMOSFET Description TheTF25115usesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatechargeandoperation withgatevoltagesaslowas2.5V. GeneralFeatures ●VDS=25V,ID=115A RDS(ON) | TUOFENGShenzhen Tuofeng Semiconductor Technology Co 拓锋半导体深圳市拓锋半导体科技有限公司 | TUOFENG | ||
CABLEASSEMBLYRG59B/U-BLACKSMAMALETOSMAFEMALE | PASTERNACK Pasternack Enterprises, Inc. | PASTERNACK | ||
ICforCMOSSystemReset Outline ThisICisasystemresetICdevelopedusingtheCMOSprocess.Superlowconsumptioncurrentof0.25µAtyp.hasbeenachievedthroughuseoftheCMOSprocess.Also,detectionvoltageishighprecisiondetectionof±2. Features 1.Superlowconsumptioncurrent0.25µAtyp.(whenVDD | MITSUMIMitsumi Electronics, Corp. 三美三美电机株式会社 | MITSUMI | ||
CMOSSystemReset Outline ThisICisasystemresetICdevelopedusingtheCMOSprocess.Superlowconsumptioncurrentof0.25µAtyp.hasbeenachievedthroughuseoftheCMOSprocess.Also,detectionvoltageishighprecisiondetectionof±2. Features 1.Superlowconsumptioncurrent0.25µAtyp.(whenVDD | MITSUMIMitsumi Electronics, Corp. 三美三美电机株式会社 | MITSUMI |
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