RF Transistor 12V, 30mA, fT=8GHz, NPN Single MCPH3

RF Transistor 12V, 30mA, fT=8GHz, NPN Single MCPH3 Features • Low-noise use : NF=1.2dB typ (f=1GHz) • High cut-off frequency : fT=8GHz typ (VCE=5V) • High gain : |S21e|2=12dB typ (f=1GHz) • Halogen free compliance

文件：403.41 Kbytes 页数：12 Pages

ONSEMI

安森美半导体

High-Frequency Low-Noise Amplifi er

NPN Epitaxial Planar Silicon Transistor Features • Low-noise use : NF=1.2dB typ (f=1GHz) • High cut-off frequency : fT=8GHz typ (VCE=5V) • High gain : |S21e|2=12dB typ (f=1GHz) • Halogen free compliance

文件：85.7 Kbytes 页数：10 Pages

SANYO

三洋

射频晶体管，NPN 单，12 V，30 mA，fT = 8 GHz

MCH3007 is RF Transistor, 12 V, 30 mA, fT = 8 GHz, NPN Single MCPH3 for High-Frequency Low-Noise Amplifier Applications. • Low-noise use : NF=1.2dB typ (f=1GHz)\n• High cut-off frequency : fT=8GHz typ (VCE=5V)\n• High gain :Forward Transfer Gain=12dB typ (f=1GHz)\n• Halogen free compliance;

ONSEMI

安森美半导体

RF Transistor 12V, 30mA, fT=8GHz, NPN Single MCPH3

RF Transistor 12V, 30mA, fT=8GHz, NPN Single MCPH3 Features • Low-noise use : NF=1.2dB typ (f=1GHz) • High cut-off frequency : fT=8GHz typ (VCE=5V) • High gain : |S21e|2=12dB typ (f=1GHz) • Halogen free compliance

文件：403.41 Kbytes 页数：12 Pages

ONSEMI

安森美半导体

Package：SC-70，SOT-323；包装：托盘 类别：分立半导体产品 晶体管 - 双极（BJT）- 射频 描述：RF TRANS NPN 12V 8GHZ 3MCPH

ONSEMI

安森美半导体