首页 >MCG10P03-TP>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
10A,30V,0.200W,LogicLevelP-ChannelPowerMOSFET 10A,30V,0.200Ohm,LogicLevel,P-ChannelPowerMOSFET TheseproductsareP-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.The | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
10A,30V,0.200ohm,LogicLevelP-ChannelPowerMOSFET Description TheseproductsareP-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchas | HARRIS Harris Corporation | HARRIS | ||
10A,30V,0.200W,LogicLevelP-ChannelPowerMOSFET 10A,30V,0.200Ohm,LogicLevel,P-ChannelPowerMOSFET TheseproductsareP-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.The | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
10A,30V,0.200Ohm,LogicLevel,P-ChannelPowerMOSFET 10A,30V,0.200Ohm,LogicLevel,P-ChannelPowerMOSFET TheseproductsareP-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.The | Intersil Intersil Corporation | Intersil | ||
10A,30V,0.200ohm,LogicLevelP-ChannelPowerMOSFET Description TheseproductsareP-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchas | HARRIS Harris Corporation | HARRIS | ||
10A,30V,0.200Ohm,LogicLevel,P-ChannelPowerMOSFET 10A,30V,0.200Ohm,LogicLevel,P-ChannelPowerMOSFET TheseproductsareP-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.The | Intersil Intersil Corporation | Intersil | ||
P-Channel60-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
10A,30V,0.200Ohm,LogicLevel,P-ChannelPowerMOSFET 10A,30V,0.200Ohm,LogicLevel,P-ChannelPowerMOSFET TheseproductsareP-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.The | Intersil Intersil Corporation | Intersil | ||
10A,30V,0.200ohm,LogicLevelP-ChannelPowerMOSFET Description TheseproductsareP-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchas | HARRIS Harris Corporation | HARRIS | ||
SinglePhase10.0AMPS.GlassPassivatedBridgeRectifiers | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | TSC |
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