首页 >MCB200N06Y-TP>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
N-ChannelEnhancementModeFieldEffectTransistor Features: ●LowGateChargeforFastSwitchingApplication ●LowRDS(ON)toMinimizeConductiveLoss ●100%EASGuaranteed ●OptimizedV(BR)DSSRuggedness ●Lead-Free,RoHSCompliant Description: TheADM200N06seriesMOSFETsisanewtechnology,whichcombinesaninnovativesuperjunct | ADVAdvanced (Shenzhen) Electronics Co.,Ltd 爱德微爱德微(深圳)电子有限公司 | ADV | ||
N-ChannelEnhancementModeFieldEffectTransistor Features: ●LowGateChargeforFastSwitchingApplication ●LowRDS(ON)toMinimizeConductiveLoss ●100%EASGuaranteed ●OptimizedV(BR)DSSRuggedness ●Lead-Free,RoHSCompliant Description: TheADM200N06GseriesMOSFETsisanewtechnology,whichcombinesaninnovativesuperjunc | ADVAdvanced (Shenzhen) Electronics Co.,Ltd 爱德微爱德微(深圳)电子有限公司 | ADV | ||
N-ChannelEnhancementModePowerMOSFET Description TheG200N06Kusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters | GOFORDGOFORD SEMICONDUCTOR 谷峰半导体 | GOFORD | ||
HiPerFETPowerMOSFETs HiPerFET™PowerMOSFETs N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr Features •Internationalstandardpackages •miniBLOCwithAluminiumnitrideisolation •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PolarHTPowerMOSFET | IXYS IXYS Corporation | IXYS | ||
N-ChannelSuperTrenchPowerMOSFET | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯电子上海雷卯电子科技有限公司 | LEIDITECH | ||
DiscreteIGBTs | SIRECTIFIERSirectifier Semiconductors 矽莱克电子江苏矽莱克电子科技有限公司 | SIRECTIFIER | ||
DiscreteIGBTs | SIRECTSirectifier Global Corp. 矽莱克半导体深圳市矽莱克半导体有限公司 | SIRECT | ||
NPTIGBTModules | SIRECTIFIERSirectifier Semiconductors 矽莱克电子江苏矽莱克电子科技有限公司 | SIRECTIFIER |
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