首页 >MCAC60N10YA-TP>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
LOWVOLTAGE,LOWRDS(on)POWERMOSFETSINHERMETICISOLATEDPACKAGE | ETCList of Unclassifed Manufacturers 未分类制造商 | ETC | ||
LOWVOLTAGE,LOWRDS(on)POWERMOSFETSINHERMETICISOLATEDPACKAGE DESCRIPTION ThisseriesofhermeticpackagedMOSFETsareideallysuitedforlowvoltageapplications;batterypoweredvoltagepowersupplies,motorcontrols,dctodcconvertersandsynchronousrectification.Thelowconductionlossallowssmallerheatsinkingandthelowgatechangesimplerdriv | IRF International Rectifier | IRF | ||
LOWVOLTAGE,LOWRDS(on)POWERMOSFETSINHERMETICISOLATEDPACKAGE | ETCList of Unclassifed Manufacturers 未分类制造商 | ETC | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChEnhancementModePowerMOSFET | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | SECOS | ||
N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.02Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100C ■LOWGATECHARGE ■VERYHIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARACTERIZATION APPLI | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.02Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100C ■LOWGATECHARGE ■VERYHIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARACTERIZATION APPLI | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=60A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.025Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.02Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100C ■LOWGATECHARGE ■VERYHIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARACTERIZATION APPLI | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS |
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