首页 >MCA6660-IL-W>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
General-PurposeSwitchingDeviceApplications Features •ON-resistanceNch:RDS(on)1=105mΩ(typ.) Pch:RDS(on)1=205mΩ(typ.) •1.8Vdrive •Halogenfreecompliance •Protectiondiodein | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | SANYO | ||
ComplementaryDualPowerMOSFET Features •ON-resistanceNch:RDS(on)1=105mΩ(typ.) Pch:RDS(on)1=205mΩ(typ.) •1.8VDrive •ESDDiode-ProtectedGate •Pb-Free,HalogenFreeandRoHSCompliance •UltrasmallPackageMCPH6(2.0mm×2.1mm×0.85mmt) •NchMOSFETandPchMOSFETareputinMCP | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
ComplementaryDualPowerMOSFET Features •ON-resistanceNch:RDS(on)1=105mΩ(typ.) Pch:RDS(on)1=205mΩ(typ.) •1.8VDrive •ESDDiode-ProtectedGate •Pb-Free,HalogenFreeandRoHSCompliance •UltrasmallPackageMCPH6(2.0mm×2.1mm×0.85mmt) •NchMOSFETandPchMOSFETareputinMCP | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
General-PurposeSwitchingDeviceApplications | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | SANYO | ||
ComplementaryDualPowerMOSFET Features •ON-resistanceNch:RDS(on)1=105mΩ(typ.) Pch:RDS(on)1=205mΩ(typ.) •1.8VDrive •ESDDiode-ProtectedGate •Pb-Free,HalogenFreeandRoHSCompliance •UltrasmallPackageMCPH6(2.0mm×2.1mm×0.85mmt) •NchMOSFETandPchMOSFETareputinMCP | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
TMOSSWITCHINGFETTRANSISTORS
| MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | Motorola | ||
3mmVisibleEmitter | Marktech Marktech Corporate | Marktech | ||
RedVisibleEmitter | Marktech Marktech Corporate | Marktech | ||
VisibleEmitter | Marktech Marktech Corporate | Marktech | ||
PhotoReflector PeakEmissionWavelength:660nm The660nmreflectivesensorconsistsofa660nmvisibleemitterandhighsensitivityphototransistorinthesamepackage.Theblackmoldedhousingreducestheeffectofexternalambientlight.Customemitter/detectorsareavailable. FEATURES >HighReliability | Marktech Marktech Corporate | Marktech |
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