首页 >MC891L>规格书列表
零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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NPNsiliconRFpowertransistor | ELEFLOW eleflow technologies co., ltd. | ELEFLOW | ||
RFPOWERTRANSISTORSNPNSILICON TheRFLine NPNSiliconRFPowerTransistors ...designedfor24voltUHFlarge–signal,common–emitteramplifierapplicationsinindustrialandcommercialFMequipmentoperatingintherangeof800–960MHz. •Specified24Volt,900MHzCharacteristics OutputPower=5.0Watts PowerGa | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | Motorola | ||
RFPOWERTRANSISTORSNPNSILICON TheRFLine NPNSiliconRFPowerTransistors ...designedfor24voltUHFlarge–signal,common–emitteramplifierapplicationsinindustrialandcommercialFMequipmentoperatingintherangeof800–960MHz. •Specified24Volt,900MHzCharacteristics OutputPower=5.0Watts PowerGa | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | Motorola | ||
Full-Mold,SeparateExcitationStep-downSwitchingModeRegulatorICsCurrentModeControl,SynchronousRectifierStep-downSwitchingMode ■Features •DIP8pinpackage •Inputvoltagerange(VIN):VO+3to18V •Synchronousrectifiermode •Highefficiency:90 •Introductionofcurrentmodecontrolmethod •Aceramiccapacitorcanbeusedforoutput •Built-inphasecorrectioncomponent •Outputcurrent:2A •Referencev | ETCList of Unclassifed Manufacturers 未分类制造商 | ETC | ||
IntegratedCircuitDualAudioOperationalAmplifier Description: TheNTE891MandNTE891SMaredualgeneralpurposeoperationalamplifiersdesignedwithparticularemphasisonperformanceinaudiosystems.Thiesedevicesdeliverlownoise,highspeedandwidebandwidthwithoutincreasingexternalcomponentsforallclosedloopgainsandistherefor | NTE NTE Electronics | NTE | ||
IntegratedCircuitDualAudioOperationalAmplifier Description: TheNTE891MandNTE891SMaredualgeneralpurposeoperationalamplifiersdesignedwithparticularemphasisonperformanceinaudiosystems.Thiesedevicesdeliverlownoise,highspeedandwidebandwidthwithoutincreasingexternalcomponentsforallclosedloopgainsandistherefor | NTE NTE Electronics | NTE | ||
IntegratedCircuitDualAudioOperationalAmplifier Description: TheNTE891MandNTE891SMaredualgeneralpurposeoperationalamplifiersdesignedwithparticularemphasisonperformanceinaudiosystems.Thiesedevicesdeliverlownoise,highspeedandwidebandwidthwithoutincreasingexternalcomponentsforallclosedloopgainsandistherefor | NTE NTE Electronics | NTE | ||
OPAx891,180MHz,0.95nV/√Hz,Ultra-lowTHD,OperationalAmplifiers 1Features •Ultra-low0.95nV/√Hzvoltagenoise •HighSpeed: –180-MHzunitygainbandwidth –140-MHzbandwidth[G=2(–1),–3dB] –105-V/μsslewrate •Verylowdistortion –THD=–91dBc(f=1MHz,RL=150Ω) –THD=–100dBc(f=1MHz,RL=1kΩ) –THD+N==137dBc(f=1kHz, | TI1Texas Instruments 德州仪器美国德州仪器公司 | TI1 | ||
OPAx891180MHz,0.95nV/√Hz,Ultra-LowTHDOperationalAmplifiers 1Features •Ultra-low0.95nV/√Hzvoltagenoise •Highspeed: –180MHzunitygainbandwidth –140MHzbandwidthatagainof2V/V(–1V/V) –105V/μsslewrate •Verylowdistortion –THD=–91dBc(f=1MHz,RL=150Ω) –THD=–100dBc(f=1MHz,RL=1kΩ) –THD+N=–137dBc(f=1kHz,BW=80 | TI1Texas Instruments 德州仪器美国德州仪器公司 | TI1 | ||
OPAx891180MHz,0.95nV/√Hz,Ultra-LowTHDOperationalAmplifiers 1Features •Ultra-low0.95nV/√Hzvoltagenoise •Highspeed: –180MHzunitygainbandwidth –140MHzbandwidthatagainof2V/V(–1V/V) –105V/μsslewrate •Verylowdistortion –THD=–91dBc(f=1MHz,RL=150Ω) –THD=–100dBc(f=1MHz,RL=1kΩ) –THD+N=–137dBc(f=1kHz,BW=80 | TI1Texas Instruments 德州仪器美国德州仪器公司 | TI1 |
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