首页 >MC74AC257DSC>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
Quad2?묲nputMultiplexerwith3?뭆tateOutputs Quad2−InputMultiplexerwith3−StateOutputs TheMC74AC257/74ACT257isaquad2−inputmultiplexerwith3−stateoutputs.FourbitsofdatafromtwosourcescanbeselectedusingaCommonDataSelectinput.Thefouroutputspresenttheselecteddataintrue(noninverted)form.Theoutputsmaybe | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
Quad2?묲nputMultiplexerwith3?뭆tateOutputs Quad2−InputMultiplexerwith3−StateOutputs TheMC74AC257/74ACT257isaquad2−inputmultiplexerwith3−stateoutputs.FourbitsofdatafromtwosourcescanbeselectedusingaCommonDataSelectinput.Thefouroutputspresenttheselecteddataintrue(noninverted)form.Theoutputsmaybe | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
Quad2?묲nputMultiplexerwith3?뭆tateOutputs Quad2−InputMultiplexerwith3−StateOutputs TheMC74AC257/74ACT257isaquad2−inputmultiplexerwith3−stateoutputs.FourbitsofdatafromtwosourcescanbeselectedusingaCommonDataSelectinput.Thefouroutputspresenttheselecteddataintrue(noninverted)form.Theoutputsmaybe | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
CMOSDIGITALINTEGRATEDCIRCUITSILICONMONOLITHIC Features •Highspeed:tpd=3.6ns(typ.)atVCC=5V •Lowpowerdissipation:ICC=8μA(max)atTa=25°C •Highnoiseimmunity:VNIH=VNIL=28VCC(min) •Symmetricaloutputimpedance:|IOH|=IOL=24mA(min)Capabilityofdriving50Ωtransmissionlines. •Balancedpropagationdela | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
CMOSDigitalIntegratedCircuitSiliconMonolithic | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
CMOSDigitalIntegratedCircuitSiliconMonolithic | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
CMOSDIGITALINTEGRATEDCIRCUITSILICONMONOLITHIC Features •Highspeed:tpd=3.6ns(typ.)atVCC=5V •Lowpowerdissipation:ICC=8μA(max)atTa=25°C •Highnoiseimmunity:VNIH=VNIL=28VCC(min) •Symmetricaloutputimpedance:|IOH|=IOL=24mA(min)Capabilityofdriving50Ωtransmissionlines. •Balancedpropagationdela | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
CMOSDigitalIntegratedCircuitSiliconMonolithic | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
CMOSDIGITALINTEGRATEDCIRCUITSILICONMONOLITHIC Features •Highspeed:tpd=3.6ns(typ.)atVCC=5V •Lowpowerdissipation:ICC=8μA(max)atTa=25°C •Highnoiseimmunity:VNIH=VNIL=28VCC(min) •Symmetricaloutputimpedance:|IOH|=IOL=24mA(min)Capabilityofdriving50Ωtransmissionlines. •Balancedpropagationdela | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA |
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