SI3443CDV

P-Channel20V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •PWMOptimized •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •HDD •AsynchronousRectification •LoadSwitchforPortableDevices

SI3443CDV

P-Channel20-V(D-S)MOSFET

SI3443CDV

P-Channel20V(D-S)MOSFET

SI3443DDV

P-Channel20V(D-S)MOSFET

SI3443DV

UltraLowOn-Resistance

SI3443DV

P-Channel2.5-V(G-S)MOSFET

SI3443DV

HEXFETPowerMOSFET

Description TheseP-channelMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievetheextremelylowon-resistancepersiliconarea.Thisbenefitprovidesthedesignerwithanextremelyefficientdeviceforuseinbatteryandloadmanagementapplications. ●U

SI3443DV

P-Channel2.5VSpecifiedPowerTrenchMOSFET

GeneralDescription ThisP-Channel2.5VspecifiedMOSFETisproducedusingFairchildsadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizeon-stateresistanceandyetmaintainlowgatecharageforsuperiorswitchingperformance. Features •–4A,–20V.RDS(ON)=0.065Ω

SI3443DVPBF

HEXFETPowerMOSFET

SI3443DVPBF

UltraLowOn-Resistance