| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
RF Amplifier Companion Chip for Dual-Band Cellular Subscriber Terminal RF Amplifier Companion Chip for Dual-Band Cellular Subscriber Terminal The MC33170 is a complete solution for drain modulated dual–band GSM 900MHz and DCS–1800MHz Power Amplifiers. Thanks to its internal decoder, the MC33170 drastically simplifies the interface between the PAs and the baseband lo 文件:231.67 Kbytes 页数:16 Pages | ONSEMI 安森美半导体 | ONSEMI | ||
RF Amplifier Companion Chip for Dual-Band Cellular Subscriber Terminal RF Amplifier Companion Chip for Dual-Band Cellular Subscriber Terminal The MC33170 is a complete solution for drain modulated dual–band GSM 900MHz and DCS–1800MHz Power Amplifiers. Thanks to its internal decoder, the MC33170 drastically simplifies the interface between the PAs and the baseband lo 文件:231.67 Kbytes 页数:16 Pages | ONSEMI 安森美半导体 | ONSEMI | ||
RF Amplifier Companion Chip for Dual-Band Cellular Subscriber Terminal RF Amplifier Companion Chip for Dual-Band Cellular Subscriber Terminal The MC33170 is a complete solution for drain modulated dual–band GSM 900MHz and DCS–1800MHz Power Amplifiers. Thanks to its internal decoder, the MC33170 drastically simplifies the interface between the PAs and the baseband lo 文件:231.67 Kbytes 页数:16 Pages | ONSEMI 安森美半导体 | ONSEMI | ||
Low Power, Single Supply Operational Amplifiers Quality bipolar fabrication with innovative design concepts are employed for the MC33171/72/74 series of monolithic operational amplifiers. These devices operate at 180 μA per amplifier and offer 1.8 MHz of gain bandwidth product and 2.1 V/μs slew rate without the use of JFET device technology. Al 文件:217.49 Kbytes 页数:12 Pages | ONSEMI 安森美半导体 | ONSEMI | ||
Radial Leaded PTC Resettable Fuse [multicomp] Specifications: Lead Material : Tin plated copper Soldering Characteristic : MIL-DTD-202, Method 208E Insulating Coating : Flame retardant epoxy Operating Current : 100mA to 3.75A Max. Voltage : Up to 90V Temperature Range : -40°C to 85°C Applications : Telecom and wide variety 文件:275.99 Kbytes 页数:3 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | ETC | ||
Low Power, Single Supply Operational Amplifiers Quality bipolar fabrication with innovative design concepts are employed for the MC33171/72/74 series of monolithic operational amplifiers. These devices operate at 180 μA per amplifier and offer 1.8 MHz of gain bandwidth product and 2.1 V/μs slew rate without the use of JFET device technology. Al 文件:217.49 Kbytes 页数:12 Pages | ONSEMI 安森美半导体 | ONSEMI | ||
Low Power, Single Supply Operational Amplifiers Quality bipolar fabrication with innovative design concepts are employed for the MC33171/72/74 series of monolithic operational amplifiers. These devices operate at 180 μA per amplifier and offer 1.8 MHz of gain bandwidth product and 2.1 V/μs slew rate without the use of JFET device technology. Al 文件:217.49 Kbytes 页数:12 Pages | ONSEMI 安森美半导体 | ONSEMI | ||
Radial Leaded PTC Resettable Fuse [multicomp] Specifications: Lead Material : Tin plated copper Soldering Characteristic : MIL-DTD-202, Method 208E Insulating Coating : Flame retardant epoxy Operating Current : 100mA to 3.75A Max. Voltage : Up to 90V Temperature Range : -40°C to 85°C Applications : Telecom and wide variety 文件:275.99 Kbytes 页数:3 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | ETC | ||
Low Power, Single Supply Operational Amplifiers Quality bipolar fabrication with innovative design concepts are employed for the MC33171/72/74 series of monolithic operational amplifiers. These devices operate at 180 μA per amplifier and offer 1.8 MHz of gain bandwidth product and 2.1 V/μs slew rate without the use of JFET device technology. Al 文件:217.49 Kbytes 页数:12 Pages | ONSEMI 安森美半导体 | ONSEMI | ||
Low Power, Single Supply Operational Amplifiers Quality bipolar fabrication with innovative design concepts are employed for the MC33171/72/74 series of monolithic operational amplifiers. These devices operate at 180 μA per amplifier and offer 1.8 MHz of gain bandwidth product and 2.1 V/μs slew rate without the use of JFET device technology. Al 文件:217.49 Kbytes 页数:12 Pages | ONSEMI 安森美半导体 | ONSEMI |
技术参数
- Pb-free:
Pb
- Halide free:
H
- Status:
Active
- Rail to Rail:
No
- Channels:
2
- VS Min (V):
4
- VS Max (V):
36
- Iq Typ (mA):
0.425
- VOS Max (mV):
3
- GBW Typ (MHz):
5
- SR Typ (V/µs):
2
- IO Typ (mA):
80
- ΔVOS/ΔT (μV/C):
2
- eN (nV/√Hz):
7.5
- Ibias Typ (pA):
100000
- CMRR Typ (dB):
110
- Architecture:
Bipolar
- Temperature Range (°C):
-40 to 85
- Package Type:
Micro8™
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON(安森美) |
24+ |
标准封装 |
13901 |
全新原装正品/价格优惠/质量保障 |
询价 | ||
ON(安森美) |
2511 |
4560 |
电子元器件采购降本 30%!公司原厂直采,砍掉中间差价 |
询价 | |||
MOT |
23+ |
SOP-8 |
2800 |
绝对全新原装!现货!特价!请放心订购! |
询价 | ||
MOT |
24+ |
SOP-8 |
7000 |
询价 | |||
MOT |
23+ |
SOP8 |
5000 |
原装正品,假一罚十 |
询价 | ||
MOT |
24+ |
SOP8 |
4652 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
询价 | ||
MOT |
24+ |
SOP-8 |
6980 |
原装现货,可开13%税票 |
询价 | ||
MOT |
25+ |
SOP8 |
4500 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
MOT |
92 |
SOIC/3.9mm |
2 |
原装现货海量库存欢迎咨询 |
询价 | ||
ON |
24+ |
SO-8 |
100000 |
一级代理进口原装现货假一赔十 |
询价 |
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