RF Amplifier Companion Chip for Dual-Band Cellular Subscriber Terminal

RF Amplifier Companion Chip for Dual-Band Cellular Subscriber Terminal The MC33170 is a complete solution for drain modulated dual–band GSM 900MHz and DCS–1800MHz Power Amplifiers. Thanks to its internal decoder, the MC33170 drastically simplifies the interface between the PAs and the baseband lo

文件：231.67 Kbytes 页数：16 Pages

ONSEMI

安森美半导体

RF Amplifier Companion Chip for Dual-Band Cellular Subscriber Terminal

RF Amplifier Companion Chip for Dual-Band Cellular Subscriber Terminal The MC33170 is a complete solution for drain modulated dual–band GSM 900MHz and DCS–1800MHz Power Amplifiers. Thanks to its internal decoder, the MC33170 drastically simplifies the interface between the PAs and the baseband lo

文件：231.67 Kbytes 页数：16 Pages

ONSEMI

安森美半导体

RF Amplifier Companion Chip for Dual-Band Cellular Subscriber Terminal

RF Amplifier Companion Chip for Dual-Band Cellular Subscriber Terminal The MC33170 is a complete solution for drain modulated dual–band GSM 900MHz and DCS–1800MHz Power Amplifiers. Thanks to its internal decoder, the MC33170 drastically simplifies the interface between the PAs and the baseband lo

文件：231.67 Kbytes 页数：16 Pages

ONSEMI

安森美半导体

Low Power, Single Supply Operational Amplifiers

Quality bipolar fabrication with innovative design concepts are employed for the MC33171/72/74 series of monolithic operational amplifiers. These devices operate at 180 μA per amplifier and offer 1.8 MHz of gain bandwidth product and 2.1 V/μs slew rate without the use of JFET device technology. Al

文件：217.49 Kbytes 页数：12 Pages

ONSEMI

安森美半导体

Radial Leaded PTC Resettable Fuse

[multicomp] Specifications: Lead Material : Tin plated copper Soldering Characteristic : MIL-DTD-202, Method 208E Insulating Coating : Flame retardant epoxy Operating Current : 100mA to 3.75A Max. Voltage : Up to 90V Temperature Range : -40°C to 85°C Applications : Telecom and wide variety

文件：275.99 Kbytes 页数：3 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Low Power, Single Supply Operational Amplifiers

Quality bipolar fabrication with innovative design concepts are employed for the MC33171/72/74 series of monolithic operational amplifiers. These devices operate at 180 μA per amplifier and offer 1.8 MHz of gain bandwidth product and 2.1 V/μs slew rate without the use of JFET device technology. Al

文件：217.49 Kbytes 页数：12 Pages

ONSEMI

安森美半导体

Low Power, Single Supply Operational Amplifiers

Quality bipolar fabrication with innovative design concepts are employed for the MC33171/72/74 series of monolithic operational amplifiers. These devices operate at 180 μA per amplifier and offer 1.8 MHz of gain bandwidth product and 2.1 V/μs slew rate without the use of JFET device technology. Al

文件：217.49 Kbytes 页数：12 Pages

ONSEMI

安森美半导体

Radial Leaded PTC Resettable Fuse

[multicomp] Specifications: Lead Material : Tin plated copper Soldering Characteristic : MIL-DTD-202, Method 208E Insulating Coating : Flame retardant epoxy Operating Current : 100mA to 3.75A Max. Voltage : Up to 90V Temperature Range : -40°C to 85°C Applications : Telecom and wide variety

文件：275.99 Kbytes 页数：3 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Low Power, Single Supply Operational Amplifiers

Quality bipolar fabrication with innovative design concepts are employed for the MC33171/72/74 series of monolithic operational amplifiers. These devices operate at 180 μA per amplifier and offer 1.8 MHz of gain bandwidth product and 2.1 V/μs slew rate without the use of JFET device technology. Al

文件：217.49 Kbytes 页数：12 Pages

ONSEMI

安森美半导体

Low Power, Single Supply Operational Amplifiers

Quality bipolar fabrication with innovative design concepts are employed for the MC33171/72/74 series of monolithic operational amplifiers. These devices operate at 180 μA per amplifier and offer 1.8 MHz of gain bandwidth product and 2.1 V/μs slew rate without the use of JFET device technology. Al

文件：217.49 Kbytes 页数：12 Pages

ONSEMI

安森美半导体