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MC33170

RF Amplifier Companion Chip for Dual-Band Cellular Subscriber Terminal

RF Amplifier Companion Chip for Dual-Band Cellular Subscriber Terminal The MC33170 is a complete solution for drain modulated dual–band GSM 900MHz and DCS–1800MHz Power Amplifiers. Thanks to its internal decoder, the MC33170 drastically simplifies the interface between the PAs and the baseband lo

文件:231.67 Kbytes 页数:16 Pages

ONSEMI

安森美半导体

MC33170DTB

RF Amplifier Companion Chip for Dual-Band Cellular Subscriber Terminal

RF Amplifier Companion Chip for Dual-Band Cellular Subscriber Terminal The MC33170 is a complete solution for drain modulated dual–band GSM 900MHz and DCS–1800MHz Power Amplifiers. Thanks to its internal decoder, the MC33170 drastically simplifies the interface between the PAs and the baseband lo

文件:231.67 Kbytes 页数:16 Pages

ONSEMI

安森美半导体

MC33170DTBR2

RF Amplifier Companion Chip for Dual-Band Cellular Subscriber Terminal

RF Amplifier Companion Chip for Dual-Band Cellular Subscriber Terminal The MC33170 is a complete solution for drain modulated dual–band GSM 900MHz and DCS–1800MHz Power Amplifiers. Thanks to its internal decoder, the MC33170 drastically simplifies the interface between the PAs and the baseband lo

文件:231.67 Kbytes 页数:16 Pages

ONSEMI

安森美半导体

MC33171

Low Power, Single Supply Operational Amplifiers

Quality bipolar fabrication with innovative design concepts are employed for the MC33171/72/74 series of monolithic operational amplifiers. These devices operate at 180 μA per amplifier and offer 1.8 MHz of gain bandwidth product and 2.1 V/μs slew rate without the use of JFET device technology. Al

文件:217.49 Kbytes 页数:12 Pages

ONSEMI

安森美半导体

MC33171

Radial Leaded PTC Resettable Fuse

[multicomp] Specifications: Lead Material : Tin plated copper Soldering Characteristic : MIL-DTD-202, Method 208E Insulating Coating : Flame retardant epoxy Operating Current : 100mA to 3.75A Max. Voltage : Up to 90V Temperature Range : -40°C to 85°C Applications : Telecom and wide variety

文件:275.99 Kbytes 页数:3 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

MC33171D

Low Power, Single Supply Operational Amplifiers

Quality bipolar fabrication with innovative design concepts are employed for the MC33171/72/74 series of monolithic operational amplifiers. These devices operate at 180 μA per amplifier and offer 1.8 MHz of gain bandwidth product and 2.1 V/μs slew rate without the use of JFET device technology. Al

文件:217.49 Kbytes 页数:12 Pages

ONSEMI

安森美半导体

MC33171P

Low Power, Single Supply Operational Amplifiers

Quality bipolar fabrication with innovative design concepts are employed for the MC33171/72/74 series of monolithic operational amplifiers. These devices operate at 180 μA per amplifier and offer 1.8 MHz of gain bandwidth product and 2.1 V/μs slew rate without the use of JFET device technology. Al

文件:217.49 Kbytes 页数:12 Pages

ONSEMI

安森美半导体

MC33172

Radial Leaded PTC Resettable Fuse

[multicomp] Specifications: Lead Material : Tin plated copper Soldering Characteristic : MIL-DTD-202, Method 208E Insulating Coating : Flame retardant epoxy Operating Current : 100mA to 3.75A Max. Voltage : Up to 90V Temperature Range : -40°C to 85°C Applications : Telecom and wide variety

文件:275.99 Kbytes 页数:3 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

MC33172D

Low Power, Single Supply Operational Amplifiers

Quality bipolar fabrication with innovative design concepts are employed for the MC33171/72/74 series of monolithic operational amplifiers. These devices operate at 180 μA per amplifier and offer 1.8 MHz of gain bandwidth product and 2.1 V/μs slew rate without the use of JFET device technology. Al

文件:217.49 Kbytes 页数:12 Pages

ONSEMI

安森美半导体

MC33172P

Low Power, Single Supply Operational Amplifiers

Quality bipolar fabrication with innovative design concepts are employed for the MC33171/72/74 series of monolithic operational amplifiers. These devices operate at 180 μA per amplifier and offer 1.8 MHz of gain bandwidth product and 2.1 V/μs slew rate without the use of JFET device technology. Al

文件:217.49 Kbytes 页数:12 Pages

ONSEMI

安森美半导体

技术参数

  • Pb-free:

    Pb

  • Halide free:

    H

  • Status:

    Active

  • Rail to Rail:

    No

  • Channels:

    2

  • VS Min (V):

    4

  • VS Max (V):

    36

  • Iq Typ (mA):

    0.425

  • VOS Max (mV):

    3

  • GBW Typ (MHz):

    5

  • SR Typ (V/µs):

    2

  • IO Typ (mA):

    80

  • ΔVOS/ΔT (μV/C):

    2

  • eN (nV/√Hz):

    7.5

  • Ibias Typ (pA):

    100000

  • CMRR Typ (dB):

    110

  • Architecture:

    Bipolar

  • Temperature Range (°C):

    -40 to 85

  • Package Type:

    Micro8™

供应商型号品牌批号封装库存备注价格
ON(安森美)
24+
标准封装
13901
全新原装正品/价格优惠/质量保障
询价
ON(安森美)
2511
4560
电子元器件采购降本 30%!公司原厂直采,砍掉中间差价
询价
MOT
23+
SOP-8
2800
绝对全新原装!现货!特价!请放心订购!
询价
MOT
24+
SOP-8
7000
询价
MOT
23+
SOP8
5000
原装正品,假一罚十
询价
MOT
24+
SOP8
4652
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
MOT
24+
SOP-8
6980
原装现货,可开13%税票
询价
MOT
25+
SOP8
4500
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
MOT
92
SOIC/3.9mm
2
原装现货海量库存欢迎咨询
询价
ON
24+
SO-8
100000
一级代理进口原装现货假一赔十
询价
更多MC3317供应商 更新时间2026-2-5 22:59:00