MC14011B说明书PDF资料库存现货ONSEMI第2页-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
MC14011BDG	文件：164.37 Kbytes Page：12 Pages	B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V 文件：164.37 Kbytes 页数：12 Pages	ONSEMI 安森美半导体	ONSEMI
MC14011BDG	文件：171.86 Kbytes Page：14 Pages	B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V 文件：171.86 Kbytes 页数：14 Pages	ONSEMI 安森美半导体	ONSEMI
MC14011BDR2	文件：171.86 Kbytes Page：14 Pages	B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V 文件：171.86 Kbytes 页数：14 Pages	ONSEMI 安森美半导体	ONSEMI
MC14011BDR2G	文件：171.86 Kbytes Page：14 Pages	B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V 文件：171.86 Kbytes 页数：14 Pages	ONSEMI 安森美半导体	ONSEMI
MC14011BDTR2	文件：171.86 Kbytes Page：14 Pages	B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V 文件：171.86 Kbytes 页数：14 Pages	ONSEMI 安森美半导体	ONSEMI
MC14011BDTR2G	文件：171.86 Kbytes Page：14 Pages	B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V 文件：171.86 Kbytes 页数：14 Pages	ONSEMI 安森美半导体	ONSEMI
MC14011BF	文件：171.86 Kbytes Page：14 Pages	B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V 文件：171.86 Kbytes 页数：14 Pages	ONSEMI 安森美半导体	ONSEMI
MC14011BFEL	文件：171.86 Kbytes Page：14 Pages	B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V 文件：171.86 Kbytes 页数：14 Pages	ONSEMI 安森美半导体	ONSEMI
MC14011BFELG	文件：171.86 Kbytes Page：14 Pages	B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V 文件：171.86 Kbytes 页数：14 Pages	ONSEMI 安森美半导体	ONSEMI
MC14011BFG	文件：171.86 Kbytes Page：14 Pages	B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V 文件：171.86 Kbytes 页数：14 Pages	ONSEMI 安森美半导体	ONSEMI

替换型号

技术参数

Pb-free：
Pb
AEC Qualified：
A
Halide free：
H
PPAP Capablee：
P
Status：
Active
Type：
NAND
Channels：
4
VCC Min (V)：
3
VCC Max (V)：
18
tpd Max (ns)：
100
IO Max (mA)：
null
Package Type：
SOIC-14

供应商	型号	品牌	批号	封装	库存	备注	价格
谛辉(北京/上海/青岛 )电子科技有限公司	MC14011B	MOT	25+	DIP	18000	原厂直接发货进口原装	询价
深圳市凌旭科技有限公司	MC14011B	MOT	2016+	SOP14	2500	只做原装,假一罚十,公司可开17%增值税发票!	询价
深圳市一线半导体有限公司	MC14011B		24+	SOP	42		询价
深圳市欧立现代科技有限公司	MC14011B	ON	24+	SOP	6980	原装现货,可开13%税票	询价
深圳市毅创腾电子科技有限公司	MC14011B	MOT	23+	SOP	3600	绝对全新原装!现货!特价!请放心订购!	询价
深圳市勤思达科技有限公司	MC14011B	ON	10+	DIP	7800	全新原装正品,现货销售	询价
深圳市卓越微芯电子有限公司	MC14011B	MOT	25+	NULL	4500	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市佳鑫美电子科技有限公司	MC14011B	MOT	25+	SOP	2987	绝对全新原装现货供应!	询价
中天科工半导体（深圳）有限公司	MC14011B	MOT	20+	SOP14	32970	原装优势主营型号-可开原型号增税票	询价
深圳市英卓尔科技有限公司	MC14011B	ON	20+	SOP3.9	2960	诚信交易大量库存现货	询价

更多MC14011B供应商更新时间2026-1-19 17:28:00

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