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型号	下载订购	功能描述	制造商上传企业	LOGO
MC14001UB	文件：216.43 Kbytes Page：8 Pages	UB-Suffix Series CMOS Gates The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of CMOS gates are inverting non−buffered functions. 文件：216.43 Kbytes 页数：8 Pages	ONSEMI 安森美半导体	ONSEMI
MC14001UB	文件：147.04 Kbytes Page：7 Pages	UB?뭆uffix Series CMOS Gates 文件：147.04 Kbytes 页数：7 Pages	ONSEMI 安森美半导体	ONSEMI
MC14001UB	文件：144.39 Kbytes Page：6 Pages	UB-Suffix Series CMOS Gates 文件：144.39 Kbytes 页数：6 Pages	ONSEMI 安森美半导体	ONSEMI
MC14001UBCP	文件：216.43 Kbytes Page：8 Pages	UB-Suffix Series CMOS Gates The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of CMOS gates are inverting non−buffered functions. 文件：216.43 Kbytes 页数：8 Pages	ONSEMI 安森美半导体	ONSEMI
MC14001UBCPG	文件：216.43 Kbytes Page：8 Pages	UB-Suffix Series CMOS Gates The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of CMOS gates are inverting non−buffered functions. 文件：216.43 Kbytes 页数：8 Pages	ONSEMI 安森美半导体	ONSEMI
MC14001UBD	文件：216.43 Kbytes Page：8 Pages	UB-Suffix Series CMOS Gates The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of CMOS gates are inverting non−buffered functions. 文件：216.43 Kbytes 页数：8 Pages	ONSEMI 安森美半导体	ONSEMI
MC14001UBDG	文件：216.43 Kbytes Page：8 Pages	UB-Suffix Series CMOS Gates The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of CMOS gates are inverting non−buffered functions. 文件：216.43 Kbytes 页数：8 Pages	ONSEMI 安森美半导体	ONSEMI
MC14001UBDR2	文件：216.43 Kbytes Page：8 Pages	UB-Suffix Series CMOS Gates The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of CMOS gates are inverting non−buffered functions. 文件：216.43 Kbytes 页数：8 Pages	ONSEMI 安森美半导体	ONSEMI
MC14001UBDR2G	文件：216.43 Kbytes Page：8 Pages	UB-Suffix Series CMOS Gates The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of CMOS gates are inverting non−buffered functions. 文件：216.43 Kbytes 页数：8 Pages	ONSEMI 安森美半导体	ONSEMI
MC14001UB_06	文件：147.04 Kbytes Page：7 Pages	UB?뭆uffix Series CMOS Gates 文件：147.04 Kbytes 页数：7 Pages	ONSEMI 安森美半导体	ONSEMI

技术参数

Pb-free：
Pb
AEC Qualified：
A
Halide free：
H
PPAP Capablee：
P
Status：
Active
Type：
NOR
Channels：
4
VCC Min (V)：
3
VCC Max (V)：
18
tpd Max (ns)：
100
IO Max (mA)：
null
Package Type：
SOIC-14

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市一线半导体有限公司	MC14001UB		24+		3000	公司现货	询价
瀚佳科技(深圳)有限公司	MC14001UB	MOT	24+	DIP-14	35200	一级代理分销/放心采购	询价
深圳市能创芯电子科技有限公司	MC14001UB	MOT	23+	DIP14	6000	原装正品假一罚百!可开增票!	询价
标准国际(香港)有限公司	MC14001UB	MOT	25+		63	公司优势库存热卖中!!	询价
深圳市瑞卓芯科技有限公司	MC14001UB	MOTOROLA/摩托罗拉	22+	CDIP14	14008	原装正品	询价
谛辉(北京/上海/青岛 )电子科技有限公司	MC14001UBDG	ON	25+	TO-252	18000	原厂直接发货进口原装	询价
齐创科技(上海,北京,青岛)有限公司	MC14001UBDR2G	ON	23+	SOP14	20000	原装正品,假一罚十	询价
深圳市弘为电子有限公司	MC14001UBCP	ON	24+	PDIP14	1125	原装现货假一罚十	询价
上海专毅电子科技有限公司	MC14001UBDG	ON	17+	C4000SO_1	9888	全新进口原装,现货库存	询价
深圳市鼎盛源芯科技有限公司	MC14001UBDR2	ON	16+	原厂封装	10000	全新原装正品,代理优势渠道供应,欢迎来电咨询	询价

更多MC14001UB供应商更新时间2025-12-1 10:20:00

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