丝印：MC14008BCP；Package：PDIP-16；4-Bit Full Adder

Features * Look—Ahead Carry Output * Diode Protection on All Inputs * All Outputs Buffered * Supply Voltage Range = 3.0 Vdc to 18 Vdc * Capable of Driving Two Low—Power TTL Loads or One Low—Power Schottky TTL Load Over the Rated Temperature Range * Pin—for—Pin Replacement for CD4008B * Pb—F

文件：1.09983 Mbytes 页数：8 Pages

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Dual 3-Input NOR Gate Plus Inverter

Dual 3-Input NOR Gate Plus Inverter The MC14000UB dual 3–input NOR gate plus inverter is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. These complementary MOS logic gates find primary use where low power dissipation and/or high noise immun

文件：191.14 Kbytes 页数：5 Pages

Motorola

摩托罗拉

Dual 3-Input NOR Gate Plus Inverter

Dual 3-Input NOR Gate Plus Inverter The MC14000UB dual 3–input NOR gate plus inverter is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. These complementary MOS logic gates find primary use where low power dissipation and/or high noise immun

文件：191.14 Kbytes 页数：5 Pages

Motorola

摩托罗拉

Dual 3-Input NOR Gate Plus Inverter

Dual 3-Input NOR Gate Plus Inverter The MC14000UB dual 3–input NOR gate plus inverter is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. These complementary MOS logic gates find primary use where low power dissipation and/or high noise immun

文件：191.14 Kbytes 页数：5 Pages

Motorola

摩托罗拉

Dual 3-Input NOR Gate Plus Inverter

Dual 3-Input NOR Gate Plus Inverter The MC14000UB dual 3–input NOR gate plus inverter is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. These complementary MOS logic gates find primary use where low power dissipation and/or high noise immun

文件：191.14 Kbytes 页数：5 Pages

Motorola

摩托罗拉

B-Suffix Series CMOS Gates

TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. 1. Supply Voltage Range = 3.0 Vdc to 18 Vdc 2. All Outputs Buffered

文件：327.76 Kbytes 页数：11 Pages

Motorola

摩托罗拉

B-Suffix Series CMOS Gates

B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V

文件：261.47 Kbytes 页数：12 Pages

ONSEMI

安森美半导体

B-Suffix Series CMOS Gates

B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V

文件：261.47 Kbytes 页数：12 Pages

ONSEMI

安森美半导体

B-Suffix Series CMOS Gates

TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. 1. Supply Voltage Range = 3.0 Vdc to 18 Vdc 2. All Outputs Buffered

文件：327.76 Kbytes 页数：11 Pages

Motorola

摩托罗拉

B-Suffix Series CMOS Gates

TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. 1. Supply Voltage Range = 3.0 Vdc to 18 Vdc 2. All Outputs Buffered

文件：327.76 Kbytes 页数：11 Pages

Motorola

摩托罗拉