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MBT3946DW

SWITCHING TRANSISTORS DUAL GENERAL PURPOSE TRANSISTORS

DESCRIPTION The MBT3946 D device is a spin off of our popular SOT 23/SOT 323 three leaded device. It is designed for general purpose amplifier applications and is housed in the SOT 363 six leaded surface mount package. By putting two discrete devi ces in one package, this device is ideal fo

文件:1.2984 Mbytes 页数:13 Pages

AITSEMI

创瑞科技

MBT3946DW

Dual General Purpose Transistor NPNPNP Silicon

文件:335.46 Kbytes 页数:11 Pages

WEITRON

MBT3946DW

Dual General Purpose Transistor

文件:508.18 Kbytes 页数:11 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

MBT3946DW1T1

Dual General Purpose Transistors

Dual General Purpose Transistors The MBT3904DW1T1, MBT3906DW1T1, and MBT3946DW1T1 devices are spin–offs of our popular SOT–23/SOT–323 three–leaded devices. They are designed for general purpose amplifier applications and are housed in the SOT–363 six–leaded surface mount package. By putting two d

文件:422.11 Kbytes 页数:10 Pages

LRC

乐山无线电

MBT3946DW1T1G

Dual General Purpose Transistor

The MBT3946DW1T1G device is a spin-off of our popular SOT−23/SOT−323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363−6 surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount

文件:246.96 Kbytes 页数:10 Pages

ONSEMI

安森美半导体

MBT3946DW1T2G

Dual General Purpose Transistor

The MBT3946DW1T1G device is a spin-off of our popular SOT−23/SOT−323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363−6 surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount

文件:246.96 Kbytes 页数:10 Pages

ONSEMI

安森美半导体

MBT3946DW1T1

Dual General Purpose Transistors

文件:720.39 Kbytes 页数:10 Pages

ETL

亚历电子

MBT3946DW1T1

Dual General Purpose Transistor

文件:168.56 Kbytes 页数:12 Pages

ONSEMI

安森美半导体

MBT3946DW1T1G

Dual General Purpose Transistor

文件:168.56 Kbytes 页数:12 Pages

ONSEMI

安森美半导体

MBT3946DW1T2

Dual General Purpose Transistor

文件:168.56 Kbytes 页数:12 Pages

ONSEMI

安森美半导体

技术参数

  • IC (mA):

    200

  • VCEO (V):

    40

  • hFE Min / Max:

    100/300

  • hFE IC (mA):

    10/1

  • fT (Min) (MHz):

    250

  • td (ns):

    10

  • tr (ns):

    25

  • ts (ns):

    225

  • tf (ns):

    60

  • Polarity:

    C

  • Package:

    SOT-363

  • PDF Datasheet:

    datasheet

供应商型号品牌批号封装库存备注价格
ON
25+
TO-252
18000
原厂直接发货进口原装
询价
ON/ONSemiconductor/安森
24+
SOT-363/SOT-323-6
9180
新进库存/原装
询价
SMD
23+
NA
15659
振宏微专业只做正品,假一罚百!
询价
ON/安森美
23+
SOT363
50000
全新原装正品现货,支持订货
询价
ON
24+
SOT363
598000
原装现货假一赔十
询价
WINBOND
22+
SOT-363
3000
原装正品,支持实单
询价
ON(安森美)
23+
标准封装
5000
原厂原装现货订货价格优势终端BOM表可配单提供样品
询价
ON(安森美)
2021/2022+
标准封装
8000
原厂原装现货订货价格优势终端BOM表可配单提供样品
询价
ON(安森美)
25+
标准封装
8800
公司只做原装,详情请咨询
询价
ONSEMI/安森美
2026+
SOT363
54815
百分百原装现货,实单必成,欢迎询价
询价
更多MBT3946DW供应商 更新时间2026-1-23 17:07:00