Surface Mount Schottky Power Rectifier

SCHOTTKY BARRIER RECTIFIER 1.0 AMPERE − 40 VOLTS This device employs the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; fre

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安森美半导体

Surface Mount Schottky Power Rectifier

SCHOTTKY BARRIER RECTIFIER 1.0 AMPERE − 40 VOLTS This device employs the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; fre

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安森美半导体

Surface Mount Schottky Power Rectifier(SMB Power Mount Power Package)

. . . employing the Schottky Barrier principle in a metal–to–silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes. • C

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Motorola

摩托罗拉

Surface Mount Schottky Power Rectifier

SCHOTTKY BARRIER RECTIFIER 1.0 AMPERE − 40 VOLTS This device employs the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; fre

文件：69.54 Kbytes 页数：5 Pages

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安森美半导体

Surface Mount Schottky Power Rectifier

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安森美半导体

Surface Mount Schottky Power Rectifier

文件：64.2 Kbytes 页数：5 Pages

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安森美半导体

肖特基功率整流器，表面贴装，1.0 A，40 V

. . ...运用肖特基势垒原理，采用金属-硅功率二极管。它具有带氧化物钝化以及金属覆盖触点的外延结构。适用于低压高频开关电源、续流二极管和极性保护二极管。 • Compact Package with J-Bend Leads Ideal for Automated Handling\n• Highly Stable Oxide Passivated Junction\n• Guardring for Over-Voltage Protection\n• Low Forward Voltage DropMechanical Characteristics:\n• Case: Molded Epoxy\n• Epoxy Meets UL94, VO at 1/8\"\n• Weight: 95 mg (approximately)\n• Catho;

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安森美半导体

Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package

. . . employing the Schottky Barrier principle in a metal–to–silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes.• Compa

恩XP

Package：DO-214AA，SMB；包装：卷带（TR） 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 40V 1A SMB

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安森美半导体

Package：DO-214AA，SMB；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 40V 1A SMB

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安森美半导体