Schottky Power Rectifier

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肖特基功率整流器，表面贴装，1.0 A，30 V

The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier's state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. It is ideally suited for low voltage, high frequency rectif • Very Low Forward Voltage Drop (0.395 Volts Max @ 1.0 A, TJ = 25 °C)\n• Small Compact Surface Mountable Package with J-Bend Leads\n• Highly Stable Oxide Passivated Junction\n• Guardring for Stress ProtectionMechanical Characteristics:\n• Case: Epoxy, Molded\n• Weight: 95 mg (approximately)\n• ;

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安森美半导体

DIODE SCHOTTKY

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安森美半导体

Package：DO-214AA，SMB；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 30V 2A SMB

ONSEMI

安森美半导体

Package：DO-214AA，SMB；包装：散装 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY

ONSEMI

安森美半导体