SWITCHMODE??Schottky Power Rectifirer

SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers

文件：84.05 Kbytes 页数：4 Pages

MOTOROLA

摩托罗拉

Isolated 20.0 AMPS. Schottky Barrier Rectifiers

Features Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon junction, majority carrier conduction Low power loss, high efficiency High current capability, low forward voltage drop High surge capability For use in low voltage, high frequency

文件：272.76 Kbytes 页数：2 Pages

TSC

台湾半导体

SCHOTTKY BARRIER RECTIFIER

FEATURES Metal-semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94

文件：1.46513 Mbytes 页数：2 Pages

SAMYANG

三阳电子

20.0 AMPS. Isolated Schottky Barrier Rectifiers

文件：149.75 Kbytes 页数：2 Pages

TSC

台湾半导体

Isolated Schottky Barrier Rectifiers

文件：218.36 Kbytes 页数：4 Pages

TSC

台湾半导体

Isolated 20.0AMP. Schottky Barrier Rectifiers

文件：214.11 Kbytes 页数：2 Pages

LUGUANG

鲁光电子

20A, 60V, Schottky Rectifier

TSC

台湾半导体

Package：TO-220-2 整包；包装：卷带（TR） 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 60V 20A ITO220

TSC

台湾半导体

SCHOTTKY BARRIER RECTIFIER

FEATURES Metal-semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94

文件：1.48791 Mbytes 页数：2 Pages

SAMYANG

三阳电子

丝印：MBRF2060CT；Package：ITO-220AB；20A High Power Schottky Barrier Rectifiersnull

■ Features • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Suffix G indicates Halogen-free part,

文件：99.88 Kbytes 页数：3 Pages

CITC

竹懋科技