首页 >MBRD1045>规格书列表

型号下载 订购功能描述制造商 上传企业LOGO

MBRD1045G

Schottky Power Rectifier, Switch-Mode, 10 A, 45 V

This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency switching power supp

文件:268.7 Kbytes 页数:8 Pages

ONSEMI

安森美半导体

MBRD1045SLASHS

10A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

Schottky Barrier Chip Guard Ring Die Construction for Transient Protection High Surge Current Capability Low Power Loss, High Efficiency Ideally Suited for Automatic Assembly For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications

文件:54.47 Kbytes 页数:4 Pages

WTE

Won-Top Electronics

MBRD1045SLASHS-T3

10A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

Schottky Barrier Chip Guard Ring Die Construction for Transient Protection High Surge Current Capability Low Power Loss, High Efficiency Ideally Suited for Automatic Assembly For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications

文件:54.47 Kbytes 页数:4 Pages

WTE

Won-Top Electronics

MBRD1045T4G

SWITCHMODE Schottky Power Rectifier Surface Mount Power Package

SWITCHMODE Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suite

文件:83.67 Kbytes 页数:6 Pages

ONSEMI

安森美半导体

MBRD1045T4G

SWITCHMODE Schottky Power Rectifier

Switch-mode Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally sui

文件:165.47 Kbytes 页数:6 Pages

ONSEMI

安森美半导体

MBRD1045T4G

Switch-mode Schottky Power Rectifier

SWITCHMODE Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suite

文件:79.77 Kbytes 页数:6 Pages

ONSEMI

安森美半导体

MBRD1045T4G

Schottky Power Rectifier, Switch-Mode, 10 A, 45 V

This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency switching power supp

文件:268.7 Kbytes 页数:8 Pages

ONSEMI

安森美半导体

MBRD1045C

10 Amp Schottky Barrier Rectifier 45 Volts

文件:434.43 Kbytes 页数:2 Pages

MCC

MBRD1045CT

Scotty Barrier Rectifier

文件:510.21 Kbytes 页数:4 Pages

GOOD-ARK

固锝电子

MBRD1045CT

10 Amp Schottky Rectifier 20V-100V

文件:168.25 Kbytes 页数:3 Pages

MCC

产品属性

  • 产品编号:

    MBRD1045

  • 制造商:

    SMC Diode Solutions

  • 类别:

    分立半导体产品 > 二极管 - 整流器 - 单

  • 包装:

    卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带

  • 二极管类型:

    肖特基

  • 电流 - 平均整流 (Io):

    10A

  • 速度:

    快速恢复 =< 500ns,> 200mA(Io)

  • 不同 Vr、F 时电容:

    400pF @ 5V,1MHz

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    TO-252-3,DPak(2 引线 + 接片),SC-63

  • 供应商器件封装:

    DPAK

  • 工作温度 - 结:

    -55°C ~ 150°C

  • 描述:

    DIODE SCHOTTKY 45V DPAK

供应商型号品牌批号封装库存备注价格
ON(安森美)
24+
标准封装
17048
全新原装正品/价格优惠/质量保障
询价
ON(安森美)
23+
13177
公司只做原装正品,假一赔十
询价
ON
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
询价
ON
1415+
TO-252
28500
全新原装正品,优势热卖
询价
ON
23+
TO-252
11846
一级代理商现货批发,原装正品,假一罚十
询价
ON
18+
TO-252
41200
原装正品,现货特价
询价
ON
25+
TO-252
50000
普通
询价
JINGDAO/晶导微
21+
TO-252
20000
晶导优势分销 实单必成 可开13点增值税
询价
ON(安森美)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
询价
ON/安森美
23+
TO-252
50000
全新原装正品现货,支持订货
询价
更多MBRD1045供应商 更新时间2026-1-30 13:28:00