MBRD1045T4G分立半导体产品的二极管-整流器-单规格书PDF中文资料

MBRD1045T4G属于分立半导体产品的二极管-整流器-单。由安森美半导体制造生产的MBRD1045T4G二极管 - 整流器 - 单单整流器二极管系列产品可用于让电流仅沿一个方向流动，并且每个器件封装都恰好实现该功能的一个实例。其他用途的二极管（包括齐纳二极管和可变电容二极管）单独列在各自的产品系列中，每个器件封装中包含多个二极管的产品也是如此。

This series of Power Rectifiers employs the Schottky Barrier

principle in a large metal−to−silicon power diode. State−of−the−art

geometry features epitaxial construction with oxide passivation and

metal overlay contact. Ideally suited for use in low voltage, high

frequency switching power supplies, free wheeling diodes, and

polarity protection diodes.

特性 Features

• Guardring for Stress Protection

• Low Forward Voltage

• 175°C Operating Junction Temperature

• Epoxy Meets UL 94 V−0 @ 0.125 in

• Short Heat Sink Tab Manufactured − Not Sheared!

• SBRB and SBRD8 Prefixes for Automotive and Other Applications

Requiring Unique Site and Control Change Requirements;

AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

Mechanical Characteristics:

• Case: Epoxy, Molded, Epoxy Meets UL 94 V−0

• Weight: 1.7 grams for D2PAK (approximately)

0.4 grams for DPAK (approximately)

• Finish: All External Surfaces Corrosion Resistant and Terminal

Leads are Readily Solderable

• Lead and Mounting Surface Temperature for Soldering Purposes:

260°C Max. for 10 Seconds

• Device Meets MSL1 Requirements

• ESD Ratings:

♦ Machine Model = C (> 400 V)

♦ Human Body Model = 3B (> 8000 V)