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MBRB30H60CT

Dual High-Voltage Schottky Rectifiers

Dual Common Cathode High Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capabil

文件:86.61 Kbytes 页数:3 Pages

VishayVishay Siliconix

威世威世科技公司

MBRB30H60CT

SCHOTTKY BARRIER RECTIFIERS

Feaures High efficiencty operation Low power loss High forward surge capability Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std (Halogen Free) Low stored charge majority carrier conduction

文件:924.36 Kbytes 页数:2 Pages

SUNMATE

森美特

MBRB30H60CT

Plastic package has Underwriters Laboratory Flammability Classification 94 V-0

文件:1.25422 Mbytes 页数:3 Pages

KERSEMI

MBRB30H60CT

Plastic package has Underwriters Laboratory Flammability Classification 94 V-0

文件:1.24349 Mbytes 页数:3 Pages

KERSEMI

MBRB30H60CT

Dual Common-Cathode Schottky Rectifier

文件:161.96 Kbytes 页数:5 Pages

VishayVishay Siliconix

威世威世科技公司

MBRB30H60CT-1G

Switch-mode Power Rectifier 60 V, 30 A

Features and Benefits • Low Forward Voltage • Low Power Loss/High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • 30 A Total (15 A Per Diode Leg) • Guard−Ring for Stress Protection • AEC−Q101 Qualified and PPAP Capable • NRVBB Prefix for Automotive and Other Appli

文件:233.21 Kbytes 页数:10 Pages

ONSEMI

安森美半导体

MBRB30H60CT-1G_V01

Switch-mode Power Rectifier 60 V, 30 A

Features and Benefits • Low Forward Voltage • Low Power Loss/High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • 30 A Total (15 A Per Diode Leg) • Guard−Ring for Stress Protection • AEC−Q101 Qualified and PPAP Capable • NRVBB Prefix for Automotive and Other Appli

文件:233.21 Kbytes 页数:10 Pages

ONSEMI

安森美半导体

MBRB30H60CTT4G

Switch-mode Power Rectifier 60 V, 30 A

Features and Benefits • Low Forward Voltage • Low Power Loss/High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • 30 A Total (15 A Per Diode Leg) • Guard−Ring for Stress Protection • AEC−Q101 Qualified and PPAP Capable • NRVBB Prefix for Automotive and Other Appli

文件:233.21 Kbytes 页数:10 Pages

ONSEMI

安森美半导体

MBRB30H60CT-1

SWITCHMODE Power Rectifier 60 V, 30 A

文件:58.59 Kbytes 页数:6 Pages

ONSEMI

安森美半导体

MBRB30H60CT-1D

SWITCHMODE Power Rectifier 60 V, 30 A

文件:58.59 Kbytes 页数:6 Pages

ONSEMI

安森美半导体

技术参数

  • Pb-free:

    Pb

  • AEC Qualified:

    A

  • Halide free:

    H

  • PPAP Capablee:

    P

  • Status:

    Active

  • Configuration:

    Common Cathode

  • VRRM Min (V):

    60

  • VF Max (V):

    0.78

  • IRM Max (µA):

    300

  • IO(rec) Max (A):

    30

  • IFSM Max (A):

    260

  • Package Type:

    D2PAK-3/TO-263-2/D2PAK-3

供应商型号品牌批号封装库存备注价格
VISHAY
TO-263
30216
提供BOM表配单TEL:0755-83759919QQ:2355705587杜S
询价
VISHAY
2015
TO-263
20000
现货库存
询价
JINGDAO/晶导微
23+
MBF
69820
终端可以免费供样,支持BOM配单!
询价
VISHAY/威世
22+
TO-263
6000
十年配单,只做原装
询价
VISHAY/威世
23+
TO263
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
VISHAY/威世
22+
TO-263
100000
代理渠道/只做原装/可含税
询价
VISHAY/威世
22+
TO-263
25000
只做原装进口现货,专注配单
询价
VISHAY/威世
23+
TO-263
89630
当天发货全新原装现货
询价
ON/安森美
24+
TO-263
30000
只做正品原装现货
询价
ON
2015+
I2PAK(T
12500
全新原装,现货库存长期供应
询价
更多MBRB30H60CT供应商 更新时间2025-12-24 9:11:00