丝印：MBR3060；Package：TO-220HF；SCHOTTKY BARRIER DIODE

文件：383.54 Kbytes 页数：9 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

丝印：MBR3060；Package：TO-247；SCHOTTKY BARRIER DIODE

文件：383.54 Kbytes 页数：9 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

丝印：MBR3060；Package：TO-247；SCHOTTKY BARRIER DIODE

文件：383.54 Kbytes 页数：9 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

丝印：MBR3060；Package：TO-220；SCHOTTKY BARRIER DIODE

文件：383.54 Kbytes 页数：9 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

丝印：MBR3060；Package：TO-220；SCHOTTKY BARRIER DIODE

文件：383.54 Kbytes 页数：9 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

Diode Array Schottky 3-Pin(3+Tab) 30A, 60V, VF=0.75V, TJMAX=175C TO-220AB

Plastic package Guardring for overvoltage protection. Low power loss, high efficiency Plastic package with UL 94V-0 flammability classification\n Flame retardant epoxy molding component\n Guardring for overvoltage protection\nLow power loss, high efficiency\n RoHS compliant (2002/95/EC);

Microchip

微芯科技

Axial Lead Rectifier

ONSEMI

安森美半导体

MBR3060CT/MBRB3060CT/MBR3060CT-1 SCHOTTKY RECTIFIER

Applications Switching power supply Converters Free-Wheeling diodes Reverse battery protection Features 150 C TJ operation Center tap configuration Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High

文件：328.03 Kbytes 页数：6 Pages

SMCDIODE

桑德斯微电子

SCHOTTKY BARRIER RECTIFIER

FEATURES Metal-semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94

文件：1.40142 Mbytes 页数：2 Pages

SAMYANG

三阳电子

丝印：MBR3060CT；Package：TO-220AB；30A High Power Schottky Barrier Rectifiers

Features • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Suffix G indicates Halogen-free part, ex

文件：99.69 Kbytes 页数：3 Pages

CITC

竹懋科技