SCHOTTKY BARRIER RECTIFIER 30A 45V

LXMICRO

广东凌讯微电子

Dual Schottky Rectifiers

DESCRIPTION This center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes,

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VISHAYVishay Siliconix

威世威世科技公司

Schottky Barrier Rectifier

FEATURES ·Dual Rectifier Conduction, Positive Center Tap ·Low Power Loss/High Efficiency ·High Current Capability, Low Forward Voltage Drop ·High Surge Capacity ·Guarding for Over voltage protection ·For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Ap

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ISC

无锡固电

SCHOTTKY BARRIER RECTIFIER

SCHOTTKY BARRIER RECTIFIER FEATURES ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss,High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters,Free Wheeling

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JIANGSU

长电科技

Product Specification

Features ● Plastic package has underwriters Laboratory Flammability Classification 94V-0 ● Dual rectifier construction， positive center tap ● Metal of silicon rectifier， majority carrier conduction ● Low forward voltage， high efficiency ● Guarding for over voltage protection ● For use in

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GOOD-ARK

固锝电子

30 Amp Rectifier 30 to 60 Volts Schottky Barrier

Features • Low Power Loss, High Efficiency • Guardring for Overvoltage Protection • Low Forward Voltage Drop And High Frequency Operation • Lead Free Finish/RoHS Compliant(Note 1) (P Suffix Designates Compliant. See Ordering Information) • Halogen Free Available Upon Request By Adding Suf

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MCC

SCHOTTKY BARRIER RECTIFIER

SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE: 30 - 100 V CURRENT: 30 A FEATURES Metal silicon junction, majority carrier conduction. High current capacity, low forward voltage drop. Guard ring for over voltage protection. High surge capacity. For use in low voltage, high frequen

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BILIN

银河微电

High Tjm Schottky Barrier Diodes

High Tjm (+175°C) Schottky Barrier Diodes FEATURES * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * Plastic package has UL flammability c

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ETCList of Unclassifed Manufacturers

未分类制造商

REVERSE VOLTAGE 40 to 200 Volts RORWARD CURRENT 30.0 Amperes

30A High Barrier Power Schottky Rectifiers - 40V-200V Features • 150°C operating junction temperature. • Low power loss, high efficiency. • High current capability • High surge capability. • Guardring for overvoltage protection. • Low stored charge majority carrier conduction • Silicon epi

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FORMOSA

美丽微半导体

Schottky Barrier Rectifier

FEATURES • Dual Rectifier Conduction, Positive Center Tap • Low Power Loss/High Efficiency • High Current Capability, Low Forward Voltage Drop • High Surge Capacity • Guarding for Overvoltage protection • For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Prot

文件：147.44 Kbytes 页数：2 Pages

ISC

无锡固电